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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3F to NNCD12F
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(DOUBLE TYPE, ANODE COMMON)
3PIN MINI MOLD
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
PACKAGE DIMENSIONS
(in millimeters)
0.4
–0.05
2.8 ± 0.2
1.5
0.65
–0.15
+0.1
external interface circuit protection.
Type NNCD3.3F to NNCD12F Series include two elements in
0.95 0.95
2.9 ± 0.2
3PIN Mini Mold Package having allowable power dissipation of
200 mW.
+0.1
ance of no less than 30 kV, thus making itself most suitable for
2
1
3
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
1.1 to 1.4
0.3
Marking
0.16
–0.06
+0.1
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
PIN CONNECTION
SC-59 (EIAJ)
1. K1: Cathode 1
2. K2: Cathode 2
3. A : Anode (common)
K2
2
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
100 W (t
T
= 10
µ
s 1 pulse)
150
°C
–55
°C
to +150
°C
(Total)
Fig. 6
0 to 0.1
0.4
–0.05
+0.1
A
3
K1
1
Document No. D11774EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
©
1996
Talking
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