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K3520PQ-XH

Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size45KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

K3520PQ-XH Overview

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

K3520PQ-XH Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage24 V
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTOR
TECHNICAL DATA
General Description
The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a
bi-directional load switch, facilitated by its common-drain configuration.
K3520PQ-XH
Common-Drain Dual N-Channel
Enhancement Mode Field Effect Transistor
2000
S2
FEATURES
Low on-state resistance
R
DS(ON)1
= 16mΩ MAX (V
GS
=4.5V, I
S
=1.0A)
R
DS(ON)2
= 17mΩ MAX (V
GS
=3.9V, I
S
=1.0A)
R
DS(ON)3
= 20mΩ MAX (V
GS
=3.5V, I
S
=1.0A)
G2
1080
S1
G1
BOTTOM : COMMON DRAIN
_
180
+
10 m
MAXIMUM RATING
(Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
SYMBOL
V
DSS
V
GSS
T
stg
RATING
24
±12
-55½150
UNIT
V
V
Equivalent Circuit
D
D
G1
Rg
G2
Rg
S1
S2
2010. 4. 29
Revision No : 0
1/3
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