SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage V
CE(sat)
.
High Collector Current Capability : I
C
and I
CP
.
Higher Efficiency Leading to Less Heat Generation.
B
KTC3572
EPITAXIAL PLANAR NPN TRANSISTOR
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
H
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
120
100
5
1
3
300
1
150
-55 150
UNIT
V
V
V
A
O
F
H
M
C
Q
P
DEPTH:0.2
A
S
K
J
F
H
E
M
3
N
L
D
R
G
mA
W
1
N
2
H
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
(1)
Collector-Emitter Saturation Voltage **
V
CE(sat)
(2)
V
CE(sat)
(3)
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
V
BE(sat)
V
BE
h
FE
(1)
DC Current Gain **
h
FE
(2)
h
FE
(3)
h
FE
(4)
Transition Frequency
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
f
T
C
ob
TEST CONDITION
I
C
=100 A
I
C
=1mA
I
E
=100 A
V
CB
=80V
V
EB
=4V, I
C
=0A
V
CES
=80V, V
BE
=0V
I
C
=100mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=250mA
V
CE
=10V, I
C
=500mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
MIN.
120
100
5
-
-
-
-
-
-
-
-
150
150
100
80
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
MAX.
-
-
-
100
100
100
0.04
0.12
0.2
1.05
0.9
-
500
-
-
-
-
MHz
pF
V
V
V
UNIT
V
V
V
nA
nA
nA
2010. 6. 4
Revision No : 0
1/3
KTC3572
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
I
C
/I
B
=10
V
CE(sat)
- I
C
10
I
C
/I
B
=50
Ta=25 C
Ta=100 C
1
10
-1
Ta=25 C
Ta=-55 C
10
-1
10
-2
10
-1
1
10
10
2
10
3
10
4
10
-2
10
-1
1
10
10
2
10
3
10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE
- I
C
BASE-EMITTER VOLTAGE V
BE
(V)
1.2
V
CE
=10V
h
FE
- I
C
600
DC CURRENT GAIN h
FE
V
CE
=10V
0.8
Ta=-55 C
Ta=25 C
400
Ta=100 C
Ta=25 C
0.4
Ta=100 C
200
Ta=-55 C
0
-10
-1
-1
-10
-10
2
-10
3
-10
4
0
-10
-1
-1
-10
-10
2
-10
3
-10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
I
C
/I
B
=20
Ta=25 C
I
C
- V
CE
I
B
=3150µA I
B
=3500µA
I
B
=2800µA
I
B
=2450µA
1.6
Ta=25 C
2
COLLECTOR CURRENT I
C
(A)
1.2
0.8
0.4
0
I
B
=2100µA
I
B
=1750µA
I
B
=1400µA
I
B
=1050µA
I
B
=700µA
I
B
=350µA
1
10
-1
10
-1
1
10
10
2
10
3
10
4
0
1
2
3
4
5
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 6. 4
Revision No : 0
2/3
KTC3572
SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(mA)
10
I
C
MAX(PULSE)*
1
I
C
MAX(CONTINUOUS)
100mS 10mS*
1mS*
0.1
DC OPERATION(Ta=25 C)
0.01
*SINGLE NONREPETTTTVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
0.001
0.1
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 6. 4
Revision No : 0
3/3
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