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KU048N03D

Description
N-Ch Trench MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size66KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KU048N03D Overview

N-Ch Trench MOSFET

KU048N03D Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)124 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)84 A
Maximum drain-source on-resistance0.0065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)336 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
KU048N03D
N-Ch Trench MOSFET
A
C
K
D
L
FEATURES
・V
DSS=30V, ID=79A.
・Low
Drain to Source On-state Resistance.
: RDS(ON)=4.8mΩ(Max.) @ VGS=10V
: RDS(ON)=6.5mΩ(Max.) @ VGS=4.5V
1
2
3
B
H
G
F
F
J
E
N
M
DIM MILLIMETERS
_
A
6.60 + 0.20
_
6.10 + 0.20
B
_
5.34 + 0.30
C
_
D
0.70 + 0.20
_
E
2.70 + 0.15
_
2.30 + 0.10
F
0.96 MAX
G
0.90 MAX
H
_
1.80 + 0.20
J
_
2.30 + 0.10
K
_
0.50 + 0.10
L
_
M
0.50 + 0.10
0.70 MIN
N
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25℃ Unless otherwise Noted)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@TC=25℃ (Note1)
Pulsed
Single Pulsed Avalanche Energy
Drain Power Dissipation
@TC=25℃
@Ta=25℃
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note1)
(Note2)
(Note2)
(Note3)
(Note1)
(Note2)
SYMBOL RATING
VDSS
VGSS
ID
IDP
EAS
PD
Tj
Tstg
RthJC
RthJA
30
±20
84
A
336
124
60
W
3.8
150
-55½150
2.1
40
℃/W
℃/W
mJ
Type Name
Lot No
UNIT
V
V
DPAK (1)
Marking
KU048N03
D
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1″
×1″
of 2 oz copper.
Pad
Note 3) L=18μ IAS=84A, VDD=15V, VGS=10V, Starting Tj=25℃
H,
PIN CONNECTION (TOP VIEW)
D
2
2
1
1
3
3
G
S
2010. 6. 17
Revision No : 0
1/4
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