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KU063N03Q

Description
N-Ch Trench MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size68KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KU063N03Q Overview

N-Ch Trench MOSFET

KU063N03Q Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance0.0063 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)64 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
D
P
KU063N03Q
N-Ch Trench MOSFET
H
T
G
L
FEATURES
・V
DSS=30V, ID=16A.
・Drain
to Source On Resistance.
RDS(ON)=6.3mΩ(Max.) @ VGS=10V
RDS(ON)=10.7mΩ(Max.) @ VGS=4.5V
8
A
5
B1 B2
1
4
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Power Dissipation
DC@Ta=25℃ (Note 1)
Pulsed
@Ta=25℃
(Note 1)
SYMBOL RATING
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
(Note 1)
RthJA
30
±20
16
64
2.5
150
-55~150
50
UNIT
V
V
A
A
W
℃/W
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85
+
0.2
_
3.94
+
0.2
_
0.3
6.02
+
_
0.4
+
0.1
0.15+0.1/-0.05
_
1.63
+
0.2
_
0.65
+
0.2
1.27
0.20+0.1/-0.05
FLP-8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note1) Surface Mounted on 1″
×1″
FR4 Board, t≤10sec.
KU063N
03Q
PIN CONNECTION (TOP VIEW)
S
S
S
G
1
8
D
D
D
D
1
2
3
8
7
6
5
2
7
3
6
4
4
5
2010. 6. 17
Revision No : 0
1/4
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