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CAT28C513T14-12T

Description
EEPROM, 64KX8, 120ns, Parallel, CMOS, PDSO40, 10 X 14 MM, TSOP-40
Categorystorage    storage   
File Size67KB,11 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Download Datasheet Parametric Compare View All

CAT28C513T14-12T Overview

EEPROM, 64KX8, 120ns, Parallel, CMOS, PDSO40, 10 X 14 MM, TSOP-40

CAT28C513T14-12T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCatalyst
Parts packaging codeTSOP
package instructionTSOP1,
Contacts40
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time120 ns
Other features10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
Data retention time - minimum100
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length12.4 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level2A
Number of functions1
Number of terminals40
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10 mm
CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
s
Fast Read Access Times: 120/150 ns
s
Low Power CMOS Dissipation:
s
Automatic Page Write Operation:
–Active: 50 mA Max.
–Standby: 200
µ
A Max.
s
Simple Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
s
End of Write Detection:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s
Fast Write Cycle Time:
–Toggle Bit
–DATA Polling
DATA
s
Hardware and Software Write Protection
s
100,000 Program/Erase Cycles
s
100 Year Data Retention
s
Commercial, Industrial and Automotive
–5ms Max
s
CMOS and TTL Compatible I/O
Temperature Ranges
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS
parallel EEPROM organized as 64K x 8-bits. It requires
a simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C512/513 features hardware and software write
protection.
The CAT28C512/513 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 32-pin DIP, PLCC, 32-pin TSOP and 40-pin
TSOP packages.
BLOCK DIAGRAM
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
65,536 x 8
E
2
PROM
ARRAY
128 BYTE PAGE
REGISTER
A7–A15
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A6
ADDR. BUFFER
& LATCHES
5096 FHD F02
© 2001 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1007, Rev. C

CAT28C513T14-12T Related Products

CAT28C513T14-12T CAT28C513N-12T CAT28C513T14-15T
Description EEPROM, 64KX8, 120ns, Parallel, CMOS, PDSO40, 10 X 14 MM, TSOP-40 EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 EEPROM, 64KX8, 150ns, Parallel, CMOS, PDSO40, 10 X 14 MM, TSOP-40
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TSOP QFJ TSOP
package instruction TSOP1, QCCJ, LDCC32,.5X.6 TSOP1,
Contacts 40 32 40
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum access time 120 ns 120 ns 150 ns
Other features 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
Data retention time - minimum 100 100 100
JESD-30 code R-PDSO-G40 R-PQCC-J32 R-PDSO-G40
JESD-609 code e0 e0 e0
length 12.4 mm 13.97 mm 12.4 mm
memory density 524288 bit 524288 bit 524288 bit
Memory IC Type EEPROM EEPROM EEPROM
memory width 8 8 8
Humidity sensitivity level 2A 3 2A
Number of functions 1 1 1
Number of terminals 40 32 40
word count 65536 words 65536 words 65536 words
character code 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 64KX8 64KX8 64KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 QCCJ TSOP1
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE CHIP CARRIER SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 240 240 240
Programming voltage 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 3.55 mm 1.2 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING J BEND GULL WING
Terminal pitch 0.5 mm 1.27 mm 0.5 mm
Terminal location DUAL QUAD DUAL
Maximum time at peak reflow temperature 30 30 30
width 10 mm 11.43 mm 10 mm
Maker Catalyst - Catalyst
Base Number Matches - 1 1
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