Philips Semiconductors
Product specification
Buffer with open-drain outputs
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
High noise immunity
•
Low power dissipation
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•
Multiple package options
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
DESCRIPTION
74HC3G07; 74HCT3G07
The 74HC3G/HCT3G07 is a high-speed Si-gate CMOS
device. Specified in compliance with JEDEC standard
no. 7A.
The 74HC3G/HCT3G07 provides three non-inverting
buffers.
The outputs of the 74HC3G/HCT3G07 devices are open
drains and can be connected to other open-drain outputs
to implement active-LOW, wired-OR or active-HIGH
wired-AND functions. For digital operation this device must
have a pull-up resistor to establish a logic HIGH-level.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
TYPICAL
SYMBOL
t
PZL
t
PLZ
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. For 74HC3G07 the condition is V
I
= GND to V
CC
.
For 74HCT3G07 the condition is V
I
= GND to V
CC
−
1.5 V.
PARAMETER
propagation delay nA to nY
propagation delay nA to nY
input capacitance
power dissipation capacitance
notes 1 and 2
CONDITIONS
HC3G
C
L
= 50 pF; V
CC
= 4.5 V
C
L
= 50 pF; V
CC
= 4.5 V
9
11
1.5
4
HCT3G
11
10
1.5
4
ns
ns
pF
pF
UNIT
2003 Oct 15
2
Philips Semiconductors
Product specification
Buffer with open-drain outputs
RECOMMENDED OPERATING CONDITIONS
74HC3G07
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−
−
−
TYP.
5.0
−
−
+25
74HC3G07; 74HCT3G07
74HCT3G07
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
V
V
V
°C
MAX.
6.0
6.0
V
CC
+125
t
r
, t
f
−
6.0
−
1000
500
400
−
−
−
−
6.0
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
V
O
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C
the value of P
D
derates linearly with 8 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output voltage
output sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V
active mode; note 1
high-impedance mode; note 1
−0.5
V < V
O
< 7.0 V
note 1
CONDITIONS
MIN.
−0.5
−
−
−0.5
−0.5
−
−
−65
−
+7.0
±20
−20
V
CC
+ 0.5
7.0
−25
50
+150
300
MAX.
UNIT
V
mA
mA
V
V
mA
mA
°C
mW
2003 Oct 15
5
RF/Wirelessly
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