2SA872, 2SA872A
Silicon PNP Epitaxial
ADE-208-1001 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency low noise amplifier
•
Complementary pair with 2SC1775/A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA872, 2SA872A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA872
–90
–90
–5
–50
300
150
–55 to +150
2SA872A
–120
–120
–5
–50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SA872
Item
Collector to emitter
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CEO
I
CBO
–90
—
—
DC current tarnsfer ratio h
FE1
*
1
h
FE2
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
250
160
—
—
—
—
—
Typ
—
—
—
—
—
—
—
120
1.8
—
Max
—
–0.5
—
800
—
2SA872A
Min
–120
—
—
250
160
Typ
—
—
—
—
—
—
—
120
1.8
—
Max
—
—
–0.5
800
—
–0.75 V
–0.5
—
—
5.0
V
MHz
pF
dB
Unit
V
µA
µA
Test conditions
I
C
= –1 mA, R
BE
=
∞
V
CB
= –75 V, I
E
= 0
V
CE
= –100 V, I
E
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –0.1 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CB
= –25 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V, f = 10 Hz
I
C
= –50
µA
R
g
= 50 kΩ
f = 1 kHz
–0.75 —
–0.5
—
—
5.0
—
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
—
Note:
D
250 to 500
E
400 to 800
—
1.5
—
—
1.5
dB
1. The 2SA872/A is grouped by h
FE1
as follows.
2
2SA872, 2SA872A
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
300
Collector Current I
C
(mA)
–10
Typical Output Characteristics
2
–2
–20
8
–1
–16
–14
–12
–10
P
C
=
–8
–6
0
30
m
200
W
–8
–4
–2
–6
100
–4
–2
µA
I
B
= 0
0
100
150
50
Ambient Temperature Ta (°C)
0
–10
–20
–30
–40
–50
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
–10
Collector Current I
C
(mA)
–3
V
CE
= –12 V
–1.0
–0.3
Ta =100°C 75 50 25 0 –25
–0.1
–0.03
–0.01
–0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8
Base to Emitter Voltage V
BE
(V)
DC Current Transfer Ratio h
FE
1,000
DC Current Transfer Ratio vs. Collector Current
V
CE
= –12 V
800
600
400
200
0
–0.01 –0.03
Ta = 100°C
75
50
25
0
–25
–0.1
–0.3
–1.0
–3
–10
–30
Collector Current I
C
(mA)
3
2SA872, 2SA872A
Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product f
T
(MHz)
1,000
V
CE
= –12 V
300
100
30
10
5
–0.01 –0.03
–0.1
–0.3
–1.0
–3
–10
–30
Collector Current I
C
(mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Contours of Constant Noise Figure (1)
100
Signal Source Resistance R
g
(kΩ)
30
10
3
1.0
0.3
6
Collector Output Capacitance C
ob
(pF)
50
20
10
5
I
E
= 0
f = 1 MHz
V
CE
= –6 V
f = 10 Hz
2
1.0
0.5
–1
–3
–10
–30
–100
Collector to Base Voltage V
CB
(V)
NF
=1
dB
2
4
8
10
–0.1
–1.0
Collector Current I
C
(mA)
–10
0.1
–0.01
4
2SA872, 2SA872A
Contours of Constant Noise Figure (2)
100
Signal Source Resistance R
g
(kΩ)
Signal Source Resistance R
g
(kΩ)
30
10
3
1.0
0.3
0.1
–0.01
100
30
10
3
1.0
0.3
NF
2
6
Contours of Constant Noise Figure (3)
V
CE
= –6 V
f = 120 Hz
V
CE
= –6 V
f = 1 kHz
6
NF
=
2
1 dB
4
=1
dB
4
8
10
8
10
–0.1
–1.0
Collector Current I
C
(mA)
–10
0.1
–0.01
–0.1
–1.0
Collector Current I
C
(mA)
–10
5
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