NXP Semiconductors
Product data sheet
18-fold ESD transient voltage
suppressor
FEATURES
•
SO20 SMD package allows 18
separate voltage regulator diodes
in a common anode configuration
•
Working voltage: typ. 6.8 V
•
Forward voltage: max. 1.3 V
•
Maximum reverse peak power
dissipation: 27.5 W at t
p
= 1 ms
•
Maximum clamping voltage at peak
pulse current: 11 V at 2.5 A
•
Low leakage current: max. 2
µA
•
ESD rating >8 kV, according
IEC 801-2.
APPLICATIONS
•
Where transient overvoltage
protection in voltage and ESD
sensitive equipment is required
such as:
– Computers
– Printers
– Business machines
– Communication systems
– Medical equipment.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
Z
I
F
I
FSM
I
ZSM
P
tot
PARAMETER
working current
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
see Fig.3
up to T
s
= 60
°C;
note 2
up to T
amb
= 25
°C;
note 3
P
ZSM
T
stg
T
j
Notes
1. DC working current limited by P
tot max
.
2. One or more diodes loaded; T
s
is the temperature at the soldering point.
3. One or more diodes loaded; device mounted on a printed-circuit board with R
th a-s
= 43.5 K/W.
1997 Dec 02
2
non-repetitive peak reverse power
dissipation
storage temperature
operating junction temperature
t
p
= 1 ms; square pulse; see Fig.4
−
−
−
−65
−
1.6
CONDITIONS
−
−
−
−
MIN.
DESCRIPTION
18-fold monolitic transient voltage
suppressor. Its 18-fold junction
common anode design protects 18
separate lines using only one
package. This device is ideal for
situations where board space is a
premium.
PINNING
PIN
1 to 5
6 and 16
7 to 15
17 to 20
BZA100
DESCRIPTION
cathode (k
1
to k
5
)
common anode (a
1
; a
2
)
cathode (k
6
to k
14
)
cathode (k
15
to k
18
)
handbook, 4 columns
k1
k2
1
2
3
4
5
20 k18
19 k17
18 k16
17 k15
16 a2
20
19
18
17
16
15
14
13
12
11
k3
k4
k5
a1
k6
k7
k8
SO20
6
7
8
9
15 k14
14 k13
13 k12
MBG396
1
2
3
4
5
6
7
8
9
10
12 k11
11 k10
k9 10
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
MAX.
note 1
200
4
2.5
UNIT
mA
mA
A
A
W
W
W
°C
°C
1.25
27.5
+150
150
NXP Semiconductors
Product data sheet
18-fold ESD transient voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
BZA100
VALUE
56.5
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
Z
V
F
V
ZSM
I
R
r
dif
S
Z
C
d
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of
working voltage
diode capacitance
I
Z
= 5 mA
I
F
= 200 mA
t
p
= 1 ms; I
ZSM
= 2.5 A
V
R
= 5.25 V
I
Z
= 1 mA
I
Z
= 5 mA
I
Z
= 5mA
see Fig.5
V
R
= 0; f = 1 MHz
V
R
= 5.25 V; f = 1 MHz
−
−
−
−
120
60
pF
pF
6.4
−
−
−
−
−
−
6.8
−
−
−
−
−
3
7.2
1.3
11
2
40
8
−
V
V
V
µA
Ω
Ω
mV/K
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Dec 02
3
NXP Semiconductors
Product data sheet
18-fold ESD transient voltage suppressor
GRAPHICAL DATA
BZA100
handbook, halfpage
10
MBG394
MBG393
handbook, halfpage
2.4
IZSM
(A)
Ptot
(W)
1.6
1
0.8
10
−1
10
−1
1
10
10
2
t (ms) 10
3
p
0
0
50
100
Ts (
o
C)
150
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
10
2
handbook, halfpage
MBG395
handbook, halfpage
100
MBG392
PZSM
(W)
Cd
(pF)
80
10
60
1
10
−1
1
10
10
2
t (ms) 10
3
p
40
0
2
4
VR (V)
6
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1997 Dec 02
4
Embedded System
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