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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD127
BZA800AL series
Quadruple ESD transient voltage
suppressor
Product data sheet
2002 Jan 11
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
FEATURES
•
ESD rating >8 kV contact discharge, according to
IEC1000-4-2
•
SOT353 (SC-88A) surface mount package
•
Common anode configuration.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems.
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA856AL
BZA862AL
BZA868AL
MARKING CODE
M1
M2
M3
1
2
3
5
handbook, halfpage
4
BZA800AL series
PINNING
PIN
1
2
3
4
5
cathode 1
common anode
cathode 2
cathode 3
cathode 4
DESCRIPTION
1
3
2
4
5
MGT580
Fig.1 Simplified outline (SOT353) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
total power dissipation
non repetitive peak reverse power
dissipation:
BZA856AL
BZA862AL
BZA868AL
T
stg
T
j
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
storage temperature
junction temperature
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
note 2; see Fig.5
square pulse; t
p
= 1 ms; see Fig.3
−
−
−
−65
−
16
15
14
+150
150
W
W
W
°C
°C
−
−
−
−
note 1
200
4
300
mA
mA
A
mW
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
non-repetitive peak forward current t
p
= 1 ms; square pulse
2002 Jan 11
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point;
note 1
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
BZA800AL series
VALUE
410
200
185
UNIT
K/W
K/W
K/W
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA856AL
BZA862AL
BZA868AL
V
Z
working voltage
BZA856AL
BZA862AL
BZA868AL
r
dif
differential resistance
BZA856AL
BZA862AL
BZA868AL
S
Z
temperature coefficient
BZA856AL
BZA862AL
BZA868AL
C
d
diode capacitance
BZA856AL
BZA862AL
BZA868AL
I
ZSM
non-repetitive peak reverse current
BZA856AL
BZA862AL
BZA868AL
t
p
= 1 ms; T
amb
= 25
°C
−
−
−
−
−
−
2.2
2.1
2
A
A
A
f = 1 MHz; V
R
= 0
−
−
−
−
−
−
125
105
90
pF
pF
pF
I
Z
= 1 mA
−
−
−
0.3
1.6
2.2
−
−
−
mV/K
mV/K
mV/K
I
Z
= 1 mA
−
−
−
−
−
−
400
300
200
Ω
Ω
Ω
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
I
Z
= 1 mA
5.32
5.89
6.46
5.6
6.2
6.8
5.88
6.51
7.14
V
V
V
−
−
−
−
−
−
1 000
500
100
nA
nA
nA
CONDITIONS
I
F
= 200 mA
−
MIN.
−
TYP.
MAX.
1.3
UNIT
V
2002 Jan 11
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
handbook, halfpage
10
MLD790
handbook, halfpage
10
2
MLD791
IZSM
(A)
BZA856AL
PZSM
(W)
BZA856AL
BZA862AL
1
BZA868AL
10
BZA862AL
BZA868AL
10
−1
10
−2
10
−1
1
tp (ms)
10
1
10
−2
10
−1
1
tp (ms)
10
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
120
Cd
MLD792
handbook, halfpage
400
MLD793
(pF)
80
Ptot
(mW)
300
200
BZA856AL
40
BZA862AL
BZA868AL
100
0
0
2
4
6
VR (V)
8
0
0
50
100
Tamb (°C)
150
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2002 Jan 11
4
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