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BUK6212-40C

Description
50A, 40V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size159KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BUK6212-40C Overview

50A, 40V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3

BUK6212-40C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-252
package instructionPLASTIC, SC-63, DPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)55 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)233 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK6212-40C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 21 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoids
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
40
50
80
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 12 A;
T
mb
= 25 °C; see
Figure 11
-
9.5
11.2
mΩ
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