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TO
-22
0A
B
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 13 July 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min Typ Max Unit
-
-
-
-
-
-
-
30
100
204
V
A
W
mΩ
Static characteristics
2.72 3.3
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Quick reference data
…continued
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
I
D
= 100 A; V
sup
≤
30 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
I
D
= 25 A; V
DS
= 24 V;
V
GS
= 10 V; see
Figure 13;
see
Figure 14
Min Typ Max Unit
-
-
501
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
33.3 -
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK653R3-30C
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK653R3-30C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 July 2011
2 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 100 A; V
sup
≤
30 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[4][5][6]
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
Pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[2]
[3]
[3]
Min
-
-16
-20
-
-
-
-
-55
-55
-
-
-
-
Max
30
16
20
100
100
721
204
175
175
100
721
501
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
-16V accumulated duration not to exceed 168 hrs
Accumulated pulse duration not to exceed 5mins.
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK653R3-30C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 July 2011
3 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
200
I
D
(A)
160
003aae529
120
P
der
(%)
80
03na19
120
(1)
80
40
40
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
V
GS
≥
10 V
(1) capped at 100 A due to package
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aae530
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
10
DC
1 ms
10 ms
100 ms
1
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25°C; I
DM
is a single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK653R3-30C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 July 2011
4 of 14
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