BUK6C1R5-40C datasheet, PDF - EEWORLD Datasheet

BUK6C1R5-40C: DescriptionTRANSISTOR 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-7, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK6C1R5-40C Overview

TRANSISTOR 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-7, FET General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	PLASTIC, D2PAK-7
Contacts	7
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	1000 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	319 A
Maximum drain current (ID)	319 A
Maximum drain-source on-resistance	0.0021 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	1278 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

Leading-edge Automotive Power

MOSFETs

Next Generation MOSFETs for a wide range

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