FMM1062ML
GaAs MMIC
FEATURES
• Low Power Consumption: 60mW (Typ.)
• Operation to 6.0 GHz
• Input Frequency divide by 4, OUT and OUT
• -3V (or+3V) DC Single Power Supply
• External 50 ohm Load Driving Capability
• Small 6-pin
Plastic
Package for SMT applications (ML)
• Tape and Reel available
DESCRIPTION
The FMM1062ML is a GaAs Microwave Static Frequency Divider
designed for dividing an input signal by 4 over a frequency range
from 2.0 to 6.0 GHz. This part is designed for Synthesizer,
Phase-Locked Oscillator, Electronic Toll Collection (ETC) applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Supply Voltage
Input Voltage
Input Voltage
Input Power
Storage Temperature
Power Dissipation
Symbol
VDD
IDD
Vin
Pin
Tstg
PD
Limit
Min.
-0.5
-
-0.5
-
-65
-
Max.
+4.5
40
VDD to +0.5
+13.0
+150
0.12
Unit
V
mA
V
dBm
°C
W
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Ambient Temperature
Symbol
VDD
Ta
Min.
+2.7
-40
Limit
Typ.
+3.0
-
Max.
+3.6
+85
Unit
V
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = -40~+85°C, VDD = +2.7~+3.6V)
Parameter
Power Supply Current
Output Power
Operating Frequency
Input Power
CASE STYLE:
ML
1. Electrical characteristics are assured on a lot basis by sample testing
at an AQL = 0.1%, Level II. Any lot failure shall be 100% retested.
2. The package marking "FJHT" shows the part number, year and month of
manufacturer.
Where: "FJ" indicates the part number (FMM1062ML)
"H" indicates the year (2000)
"T" indicates the month (July)
Edition 1.2
August 1999
Symbol
IDD
Pout
Condition
VDD = 3.0V, Ta = 25°C
RL = 50Ω, fin = 5.8 GHz
Pin = 0dBm
fin = 2~6 GHz
Min.
-
-8
2.0
-5
Limit
Typ. Max.
21.0
-4
-
0
-
0
6.0
+10
Unit
mA
dBm
GHz
dBm
f
in
Pin
1
FMM1062ML
GaAs MMIC
Test Circuit
Positive Supply Voltage
VDD = +3V Operation Circuit
VDD = +3.0V
0.33µF
50Ω
50Ω
IN
OUT
OUTPUT
3
1000pF
1000pF
50Ω
4
VDD
VSS
5
INPUT
1000pF
6
IN
OUT
2
OUTPUT
1
1000pF
Negative Supply Voltage
VSS = -3V Operation Circuit
50Ω
50Ω
IN
OUT
OUTPUT
3
1000pF
1000pF
50Ω
4
VDD
VSS
5
INPUT
1000pF
6
IN
OUT
2
OUTPUT
1
1000pF
0.33µF
VSS = -3.0V
2
FMM1062ML
GaAs MMIC
NOTES
3
FMM1062ML
GaAs MMIC
Case Style "ML"
1.9±0.2
(0.075)
0.4
(0.016)
6
+0.1
–0.05
0.1
0-15°
(0.016)
5
4
(0.024)
0.6
±0.2
(0.110)
(0.063)
0~0.1
2.8
–0.3
+0.4
1.6
–0.1
+0.2
MIN 0.2
(0.008)
(0.008)
0.4
+0.1
–0.05
MIN 0.2
0.4
+0.1
–0.05
(0.016)
Top View
Lead Designation
1
2
3
0.4
–0.05
(0.016)
+0.1
0.4
+0.1
–0.05
(0.016)
0.5
+0.1
–0.05
(0.020)
2.9±0.2
(0.114)
0.4
+0.1
–0.05
(0.016)
1.1
–0.1
(0.043)
+0.2
0.15
–0.05
(0.006)
0.8±0.1
(0.031)
+0.1
1. OUT
2. VSS
3. OUT
4. IN
5. VDD
6. IN
Unit: mm (inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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