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BUK7509-75A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size128KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK7509-75A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK7509-75A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
Rev. 02 — 06 November 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7509-75A in SOT78 (TO-220AB)
BUK7609-75A in SOT404
(D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Standard level compatible.
3. Applications
c
c
s
Automotive and general purpose power switching:
x
12 V, 24 V and 42 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
mb
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to drain (d)
mb
d
g
s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)

BUK7509-75A Related Products

BUK7509-75A BUK7609-75A
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? conform to conform to
Reach Compliance Code unknown not_compliant
Configuration Single Single
Maximum drain current (Abs) (ID) 75 A 75 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 230 W 230 W
surface mount NO YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
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