BAS16WS
PRV : 100 Volts
Io : 250 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
SMALL SIGNAL DIODES
SOD-323
0.012 (0.3)
0.065 (1.65)
0.112 (2.85)
0.076 (1.95)
0.059 (1.5)
0.043 (1.1)
max. 0.004(0.1)
max. 0.006 (0.15)
min. 0.010 (0.25)
0.049 (1.25)
max.
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Continuous)
Surge Forward Current at t = 1 s and Tj = 25
°C
Power Dissipation at T
amb
= 25
°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
Tj
T
S
0.100 (2.55)
Value
75
100
250
500
200
1)
Unit
V
V
mA
mA
mW
°C
°C
150
-65 to + 150
ELECTRICAL CHARACTERISTICS
(Rating at Tj =
Parameter
Forward Voltage at I
F
= 50 mA
Leakage Current
at V
R
=25 V, Tj=150°C
at V
R
= 75 V
at V
R
=75 V, Tj=150°C
Capacitance at V
F
= V
R
= 0 V
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA,
I
R
= 6 V, R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
Page 1 of 2
25
°C
unless otherwise specified)
Symbol
V
F
I
R
I
R
I
R
C
tot
Trr
R
thJA
Min.
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1
30
1
50
4
6
650
1)
Unit
V
nA
µA
µA
pF
ns
°C/W
Note : 1) Valid provided that electrodes are kept at ambient temperature
Rev. 03 : March 25, 2005
RATINGS AND CHARACTERISTIC CURVES ( BAS16WS)
Forward charecteristics
mA
10
3
Dynamic forward resistance
versus forward current
V
10
4
5
2
10
2
T
j
= 25
°C
f = 1 kHz
T
j
= 100
°C
T
j
= 25
°C
10
3
5
i
F
10
r
F
2
10
2
5
1
2
10
10
-1
5
2
10
-2
1
0
1
2V
10
-2
10
-1
1
10
10
2
mA
V
F
I
F
Admissible power dissipation
versus ambient temperture
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
500
Relative capacitance
versus reverse voltage
400
C
tot
(V
R
)
1.1
C
tot
(0 V)
1.0
T
j
= 25
°C
f = 1 kHz
P
tot
300
0.9
200
0.8
100
0.7
0
0
100
T
amb
200
°C
0
2
4
6
8
10 V
V
R
Page 2 of 2
Rev. 03 : March 25, 2005
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