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BUK753R4-30B

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size104KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK753R4-30B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK753R4-30B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)255 W
surface mountNO
BUK753R4-30B; BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 01 — 5 January 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
s
TrenchMOS technology
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching
1.4 Quick reference data
s
E
DS(AL)S
1.3 J
s
I
D
75 A
s
R
DSon
= 2.9 mΩ (typ)
s
P
tot
255 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to drain (D)
mbb076
Simplified outline
mb
mb
Symbol
D
G
S
2
1
3
SOT404 (D2PAK)
1 2 3
SOT78 (TO-220AB)

BUK753R4-30B Related Products

BUK753R4-30B BUK763R4-30B
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 75 A 75 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 255 W 255 W
surface mount NO YES
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