BUK75/7608-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 28 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I
Very low on-state resistance
I
175
°C
rated
I
Q101 compliant
I
Standard level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V loads
1.4 Quick reference data
I
E
DS(AL)S
≤
241 mJ
I
I
D
≤
75 A
I
R
DSon
= 6.6 mΩ (typ)
I
P
tot
≤
157 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outlines and symbol
Description
Gate (G)
Drain (D)
Source (S)
mounting base,
connected to
drain (D)
1
mbb076
Simplified outline
[1]
Symbol
mb
D
mb
G
S
2
3
SOT404 (D2PAK)
1 2 3
SOT78 (TO-220AB)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Package
Name
Description
TO-220AB
Version
SOT78A
Type number
BUK7508-40B
BUK7608-40B
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V; see
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A; V
DS
≤
40 V;
V
GS
= 10 V; R
GS
= 50
Ω;
starting at T
mb
= 25
°C
[1]
[2]
[1]
[2]
[1]
Conditions
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
Max
40
40
±20
101
75
71
407
157
+175
+175
101
75
407
241
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
mb
= 25
°C;
see
Figure 1
Source-drain diode
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK75_7608-40B_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 November 2007
2 of 14
NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
003aac070
120
I
D
(A)
80
003aac081
(1)
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
P
tot
P
der
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
V
GS
≥
10 V
[1]
Capped at 75 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature
003aac079
t
p
= 10
µs
100
µs
(1)
1 ms
10
10 ms
100 ms
DC
1
10
−1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C;
I
DM
is single pulse.
[1]
Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7608-40B_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 November 2007
3 of 14
NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
see
Figure 4
[1]
[2]
Symbol Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Min
-
-
-
Typ
-
60
50
Max
0.95
-
-
Unit
K/W
K/W
K/W
[1]
[2]
Vertical in still air; SOT78 package.
mounted on a printed circuit board; minimum footprint; SOT404 package
1
Z
th(j
−
mb)
(K / W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
single pulse
P
003aac080
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to mounting bast as a function of pulse duration
BUK75_7608-40B_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 November 2007
4 of 14
NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; see
Figure 9
and
10
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
=25 A; see
Figure 6
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of die
SOT78
from upper edge of drain
mounting base to center of die
SOT404
L
S
internal source inductance
from source lead 6 mm from
package to source bond pad
-
7.5
-
nH
-
2.5
-
nH
-
3.5
nH
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
see
Figure 12
I
D
= 25 A; V
DD
= 32 V; V
GS
= 10 V;
see
Figure 14
-
-
-
-
-
-
-
-
-
-
-
36
9
12
2017
486
213
20
51
20
33
4,5
-
-
-
2689
583
291
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
-
-
6.6
-
8
15.2
mΩ
mΩ
-
-
-
0.02
-
2
1
500
100
µA
µA
nA
2
1
-
3
-
-
4
-
4.4
V
V
V
40
36
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
BUK75_7608-40B_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 November 2007
5 of 14
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