PMEG3020EPA
2 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 15 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin
SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability.
1.2 Features
Average forward current: I
F(AV)
≤
2 A
Reverse voltage: V
R
≤
30 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
65
°C
T
sp
≤
140
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
410
435
2
2
30
470
2500
A
A
V
mV
μA
reverse voltage
forward voltage
reverse current
I
F
= 2 A
V
R
= 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG3020EPA
2 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
anode
cathode
3
3
1, 2
006aab624
Simplified outline
Graphic symbol
1
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Package
Name
Description
Version
Type number
PMEG3020EPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2
×
2
×
0.65 mm
4. Marking
Table 4.
Marking codes
Marking code
A2
Type number
PMEG3020EPA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
65
°C
T
sp
≤
140
°C
I
FRM
I
FSM
P
tot
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
30
Unit
V
-
-
-
-
-
-
-
2
2
7
17
500
960
1800
A
A
A
A
mW
mW
mW
[2][3]
[4][5]
[4][6]
[4][1]
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
2 of 13
NXP Semiconductors
PMEG3020EPA
2 A low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
[6]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Both anode pins connected.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
250
130
70
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
3 of 13
NXP Semiconductors
PMEG3020EPA
2 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
10
0.02
0
0.01
0.33
0.2
006aab637
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab638
duty cycle =
10
2
1
0.75
0.5
0.33
0.25
0.1
10
0
0.02
0.01
0.2
0.05
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
4 of 13
NXP Semiconductors
PMEG3020EPA
2 A low V
F
MEGA Schottky barrier rectifier
10
2
duty cycle =
1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.25
10
0.1
0.2
0.05
006aab639
0
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.5 A
I
F
= 1 A
I
F
= 2 A
I
R
C
d
reverse current
diode capacitance
V
R
= 10 V
V
R
= 30 V
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
t
rr
[1]
Min
-
-
-
-
-
-
-
[1]
Typ
290
335
410
100
435
150
55
47
Max
-
-
470
-
2500
-
-
-
Unit
mV
mV
mV
μA
μA
pF
pF
ns
reverse recovery time
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
5 of 13
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