2N5114 SERIES
SINGLE P-CHANNEL
JFET SWITCH
FEATURES
REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116
LOW ON RESISTANCE
LOW CAPACITANCE
ABSOLUTE MAXIMUM
RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
3
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
30V
30V
-50mA
500mW
-65 to 150°C
-55 to 150°C
75Ω
6pF
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source On Voltage
-0.7
-1.0
-0.7
-0.5
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
Drain to Source Saturation Current
2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
5
-5
-10
-10
-10
75
100
-500
-500
-500
150
Ω
pA
-30
-195
-15
500
-110
500
-5
-55
500
TYP
2N5114
MIN
30
5
10
-1
-1.3
-0.8
-0.6
mA
MAX
2N5115
MIN
30
3
6
-1
MAX
2N5116
MIN
30
1
4
-1
V
MAX
UNIT
CONDITIONS
I
G
= 1µA, V
DS
= 0V
V
DS
= -15V, I
D
= -1nA
I
G
= -1mA, V
DS
= 0V
V
GS
= 0V, I
D
= -15mA
V
GS
= 0V, I
D
= -7mA
V
GS
= 0V, I
D
= -3mA
V
DS
= -18V, V
GS
= 0V
V
DS
= -15V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 12V
V
DS
= -15V, V
GS
= 7V
V
DS
= -15V, V
GS
= 5V
V
GS
= 0V, I
D
= -1mA
Note: All Min & Max limits are absolute values. Negative signs indicate electrical polarity only.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201134 5/14/2014 Rev#A6 ECN# 2N5114
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
g
fs
g
os
r
ds(on)
C
iss
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
20
5
C
rss
Reverse Transfer Capacitance
6
6
e
n
Equivalent Noise Voltage
20
TYP
4.5
20
75
25
7
7
7
100
25
150
25
2N5114
MIN
MAX
2N5115
MIN
MAX
2N5116
MIN
MAX
UNIT
mS
µS
Ω
CONDITIONS
V
DS
= -15V, I
D
= -1mA
f
= 1kHz
V
GS
= 0V, I
D
= -1mA
f
= 1kHz
V
DS
= -15V, V
GS
= 0V
f
= 1MHz
V
DS
= 0V, V
GS
= 12V
f
= 1MHz
pF
V
DS
= 0V, V
GS
= 7V
f
= 1MHz
V
DS
= 0V, V
GS
= 5V
f
= 1MHz
V
DG
= -10V, I
D
= -10mA
nV/√Hz
f
= 1 kHz
SWITCHING CHARACTERISTICS (max)
SYM.
t
d(on)
t
r
t
d(off)
t
f
CHARACTERISTIC
Turn On Time
Turn Off Time
2N5114
6
10
6
15
2N5115
10
20
8
30
2N5116
12
30
10
50
ns
UNITS
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
V
DD
V
GG
R
L
R
G
I
D(on)
V
GS(H)
V
GS(L)
2N5114
-10V
20V
430Ω
100Ω
-15mA
0V
-11V
2N5115
-6V
12V
910Ω
220Ω
-7mA
0V
-7V
2N5116
-6V
8V
2kΩ
390Ω
-3mA
0V
-5V
SWITCHING TEST CIRCUIT
V
GG
V
DD
0.210
0.170
V
GS(H)
V
GS(L)
1.2k
R
L
0.1µF
R
G
51
1.2k
Sampling
Scope
51
7.5k
51
Note: All Dimensions are in inches
NOTES
1.
2.
3.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Derate 3mW/°C above 25°C.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete
components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro
Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC
Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201134 5/14/2014 Rev#A6 ECN# 2N5114
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