SPICE MODEL: MMDT4401
MMDT4401
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version
(Note 3)
E
2
B
2
C
1
C
2
A
B
1
E
1
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
B
C
D
F
M
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K2X
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
K
H
0.65 Nominal
H
J
K
L
M
a
J
D
C
2
B
1
E
1
F
L
All Dimensions in mm
E
2
B
2
C
1
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
Value
60
40
6.0
600
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
DS30111 Rev. 8 - 2
1 of 4
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MMDT4401
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
20
40
80
100
40
¾
0.75
¾
¾
¾
1.0
0.1
40
1.0
250
¾
¾
¾
300
¾
0.40
0.75
0.95
1.2
6.5
30
15
8.0
500
30
¾
I
C
= 100µA, V
CE
=
I
C
= 1.0mA, V
CE
=
I
C
= 10mA, V
CE
=
I
C
= 150mA, V
CE
=
I
C
= 500mA, V
CE
=
1.0V
1.0V
1.0V
1.0V
2.0V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
60
40
6.0
¾
¾
¾
¾
¾
100
100
V
V
V
nA
nA
I
C
= 100mA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100mA, I
C
= 0
V
CE
= 35V, V
EB(OFF)
= 0.4V
V
CE
= 35V, V
EB(OFF)
= 0.4V
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
V
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
f
T
pF
pF
kW
x 10
-4
¾
mS
MHz
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
t
d
t
r
t
s
t
f
(Note 5)
¾
¾
¾
¾
15
20
225
30
ns
ns
ns
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Ordering Information
Device
MMDT4401-7
Notes:
Packaging
SOT-363
Shipping
3000/Tape & Reel
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMDT4401-7-F.
Marking Information
K2X YM
K2X YM
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30111 Rev. 8 - 2
2 of 4
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MMDT4401
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs
Ambient Temperature
h
FE
, DC CURRENT GAIN
1000
T
A
= 125°C
100
T
A
= -25°C
T
A
= +25°C
10
V
CE
= 1.0V
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
30
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I
C
= 300mA
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
20
Cibo
CAPACITANCE (pF)
10
5.0
Cobo
1.0
0.1
1.0
10
50
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
I
B
, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.5
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
0.4
T
A
= 25°C
0.3
T
A
= 150°C
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
CE
= 5V
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
0.1
T
A
= -50°C
0
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
DS30111 Rev. 7 - 2
3 of 4
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MMDT4401
1000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
1
DS30111 Rev. 8 - 2
4 of 4
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MMDT4401
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