MTB50N06E datasheet, PDF - EEWORLD Datasheet

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MTB50N06E: Description50A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size32KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MTB50N06E Overview

50A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3

MTB50N06E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Manufacturer packaging code	CASE 418B-02
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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MTB50N06E Related Products

	MTB50N06E	MTB15N06ET4	MTB50N06ET4
Description	50A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3	15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3	50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3
Manufacturer packaging code	CASE 418B-02	CASE 418B-02	CASE 418B-02
Reach Compliance Code	unknown	unknown	unknown
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	50 A	15 A	50 A
Maximum drain-source on-resistance	0.025 Ω	0.12 Ω	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	incompatible	-	incompatible
Maker	Motorola ( NXP )	-	Motorola ( NXP )
ECCN code	EAR99	-	EAR99
Maximum drain current (Abs) (ID)	50 A	-	50 A
JESD-609 code	e0	-	e0
Maximum operating temperature	150 °C	-	150 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Maximum power dissipation(Abs)	2.5 W	-	2.5 W
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED

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