HYMD232M646A8-K datasheet, PDF

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HYMD232M646A8-K: DescriptionDDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200; Categorystorage storage; File Size301KB，19 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD232M646A8-K Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200

HYMD232M646A8-K Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL

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32Mx64 bits

Unbuffered DDR SO-DIMM

HYMD232M646A(L)8-J/M/K/H/L

DESCRIPTION

Hynix HYMD232M646A(L)8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Out-

line Dual In-Line Memory Modules (SO-DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix

HYMD232M646A(L)8-J/M/K/H/L series consists of eight 32Mx8 DDR SDRAM in 400mil TSOP II packages on a

200pin glass-epoxy substrate. Hynix HYMD232M646A(L)8-J/M/K/H/L series provide a high performance 8-byte inter-

face in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition.

Hynix HYMD232M646A(L)8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchro-

nous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on

both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high

bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable

latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD232M646A(L)8-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect func-

tion is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to

identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

256MB (32M x 64) Unbuffered DDR SO-DIMM

based on 32Mx8 DDR SDRAM

JEDEC Standard 200-pin small outline dual in-line

memory module (SO-DIMM)

2.5V +/- 0.2V VDD and VDDQ Power supply

All inputs and outputs are compatible with SSTL_2

interface

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz/166MHz

All addresses and control inputs except Data, Data

strobes and Data masks latched on the rising edges

of the clock

Data(DQ), Data strobes and Write masks latched on

both rising and falling edges of the clock

•

Data inputs on DQS centers when write (centered

DQ)

Data strobes synchronized with output data for read

and input data for write

Programmable CAS Latency 2 / 2.5 supported

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

tRAS Lock-out function supported

Internal four bank operations with single pulsed RAS

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

•

ORDERING INFORMATION

Part No.

HYMD232M646A(L)8-J

HYMD232M646A(L)8-M

HYMD232M646A(L)8-K

HYMD232M646A(L)8-H

HYMD232M646A(L)8-L

=2.5V

DDQ

=2.5V

Power Supply

Clock Frequency

166MHz (*DDR333)

133MHz (*DDR266:2-2-2)

133MHz (*DDR266A)

133MHz (*DDR266B)

100MHz (*DDR200)

Interface

Form Factor

SSTL_2

200pin Unbuffered SO-DIMM

67.6mm x 31.75mm x 1mm

* JEDEC Defined Specifications compliant

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.3/Oct. 02

HYMD232M646A8-K Related Products

	HYMD232M646A8-K	HYMD232M646AL8-M	HYMD232M646AL8-J	HYMD232M646AL8-K	HYMD232M646A8-L	HYMD232M646A8-M	HYMD232M646A8-H	HYMD232M646A8-J	HYMD232M646AL8-L	HYMD232M646AL8-H
Description	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Contacts	200	200	200	200	200	200	200	200	200	200
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	unknown	unknown	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.7 ns	0.75 ns	0.8 ns	0.75 ns	0.75 ns	0.7 ns	0.8 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	166 MHz	133 MHz	125 MHz	133 MHz	133 MHz	166 MHz	125 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200	200	200	200	200
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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