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FMM5823X

Description
Wide Band Medium Power Amplifier, 17700MHz Min, 27000MHz Max, 3.67 X 1.25 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
CategoryWireless rf/communication    Radio frequency and microwave   
File Size419KB,15 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric View All

FMM5823X Overview

Wide Band Medium Power Amplifier, 17700MHz Min, 27000MHz Max, 3.67 X 1.25 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE

FMM5823X Parametric

Parameter NameAttribute value
MakerSUMITOMO
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)22 dBm
Maximum operating frequency27000 MHz
Minimum operating frequency17700 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
FMM5823X
K-Band Power Amplifier MMIC
FEATURES
•High Output Power: P1dB = 27~29 dBm (Typ.)
•High Linear Gain: GL = 19 dB(Typ.)
•Frequency Band: 17.7 - 27.0 GHz
•High Linearity: OIP3 = 36.5dBm(typ.)
•Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5823X is a power amplifier MMIC that contains a four
stage amplifier, internally matched, for standard communications
band in 17.7 to 27.0GHz frequency range. This product is well
suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
10
-3
22
 -55
to +125
Unit
V
V
dBm
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Operating Backside Temperature
Top
This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃)
Condition
≦7
14
 -40
to +85
Unit
V
dBm
Limits
Unit
Min. Typ. Max.
Frequency Range
f
VDD=6.0V
17.7
-
19.7
GHz
Output Power at 1dB G.C.P.
P1dB
IDD(DC)=700mA typ.
25.0
27.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
Zs=Zl=50ohm
16
18
dB
Power Added Efficiency at 1dB G.C.P.
Nadd
-
12
-
%
Third Order Intermodulation
IM3*
*df=10MHz,Po=19dBm -32
-35
-
dBc
-
700
1200
mA
Drain Current at 1dB G.C.P.
Iddrf
          (S.C.L.)
Input Return Loss at Pin=-20dBm
RLin
-
-7
-
dB
Output Return Loss at Pin=-20dBm
RLout
-
-8
-
dB
Frequency Range
f
VDD=6.0V
21.2
-
27
GHz
Output Power at 1dB G.C.P.
P1dB
IDD(DC)=700mA typ.
27.0
29.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
Zs=Zl=50ohm
16
18
dB
Power Added Efficiency at 1dB G.C.P.
Nadd
-
15
-
%
-35
-
dBc
Third Order Intermodulation
IM3** **df=10MHz,Po=19dBm -32
Drain Current at 1dB G.C.P.
Iddrf
          (S.C.L.)
-
900
1500
mA
Input Return Loss at Pin=-20dBm
RLin
-
-7
-
dB
Output Return Loss at Pin=-20dBm
RLout
-
-10
-
dB
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
Item
Symbol
Test Conditions
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Class 0
~ 199V
Edition 1.2
January 2006
1
http://www.eudyna.com/
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