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HYMR1816-653-LP

Description
Rambus DRAM Module, 16MX18, CMOS, RIMM-184
Categorystorage    storage   
File Size112KB,10 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HYMR1816-653-LP Overview

Rambus DRAM Module, 16MX18, CMOS, RIMM-184

HYMR1816-653-LP Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeDMA
package instruction,
Contacts184
Reach Compliance Codeunknown
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
JESD-30 codeR-XDMA-N184
memory density301989888 bit
Memory IC TypeRAMBUS DRAM MODULE
memory width18
Number of functions1
Number of ports1
Number of terminals184
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX18
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal locationDUAL
Direct Rambus
RIMM
Module
32 MBytes (16M x 16/18) based on 4Mx16/18
Overview
The Direct Rambus™ RIMM™ module is a general purpose
high-performance memory subsystem suitable for use in a
broad range of applications including computer memory,
personal computers, workstations, and other applications
where high bandwidth and low latency are required.
The 64 MB Direct Rambus RIMM module consists of four
64M Direct Rambus DRAM (Direct RDRAM™ ) devices.
These are extremely high-speed CMOS DRAMs organized
as 4M words by 16 or 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz or 800MHz
transfer rates while using conventional system and board
design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAM allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's sixteen
banks support up to four simultaneous transactions.
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available from RIMM modules. An optional -LP designator
is used to indicate low power modules.
Organization
16M x 16
16M x 16
16M x 16
16M x 18
16M x 18
16M x 18
I/O Freq. t
rac
(Row Access
MHz
Time) ns
600
800
800
600
800
800
53
45
40
53
45
40
Part
Number
HYMR1616-653
HYMR1616-845
HYMR1616-840
HYMR1816-653
HYMR1816-845
HYMR1816-840
Form Factor
The Direct Rambus RIMM modules are offered in a 184-pin
1mm pin pitch form factor suitable for desktop and other
system applications.
Features
184-pin 1mm pin spacing
Card Size: 133.35mm x 34.93mm x 1.27mm
(5.25” x 1.375” x 0.050”)
64 MB Direct RDRAM storage
Each RDRAM has 16 banks, for 128 banks total on
module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 volt supply (±5%)
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Rev. 0.2/Jan. 99
1
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