PD -2.463 rev. B 03/99
HFA60MC60C
HEXFRED
Features
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of
Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
V
R
= 600V
V
F
(typ.)
= 1.1V
I
F(AV)
= 60A
Q
rr
(typ.) = 200nC
3
1
ANODE
1
2
COMMON
CATHODE
ANODE
2
I
RRM
(typ.) = 6A
t
rr
(typ.) = 30ns
di
(rec)M
/dt (typ.)
= 170A/µs
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TO-249AA
Max.
600
50
24
200
220
125
50
-55 to +150
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
E
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Units
V
A
µJ
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal - Mechanical Characteristics
Parameter
R
θJC
R
θCS
Wt
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque
Min.
35 (4.0)
Typ.
0.10
58 (2.0)
Max.
1.0
0.50
50 (5.7)
Units
°C/W
K/W
g (oz)
lbfin
(Nm)
Note:
Limited by junction temperature
L = 100µH, duty cycle limited by max T
J
125°C
1
HFA60MC60C
PD-2.463 rev. B 03/99
Electrical Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
V
FM
Cathode Anode Breakdown Voltage
Max Forward Voltage
Min. Typ. Max. Units
600
1.3 1.5
1.4 1.7
1.1 1.3
2.0 10
0.50 2.0
68 100
8.0
V
V
µA
mA
pF
nH
Test Conditions
I
R
= 100µA
I
F
= 30A
See Fig. 1
I
F
= 60A
I
F
= 30A, T
J
= 125°C
V
R
= V
R
Rated
See Fig. 2
T
J
= 125°C, V
R
= 480V
See Fig. 3
V
R
= 200V
From terminal hole to terminal hole
I
RM
C
T
L
S
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Reverse Recovery Time
Min. Typ. Max. Units
Test Conditions
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t
b
30
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
67 100
ns T
J
= 25°C
See
112 170
T
J
= 125°C Fig. 5
I
F
= 50A
6.0 11
T
J
= 25°C
See
A
9.0 16
T
J
= 125°C Fig. 6
V
R
= 200V
200 550
T
J
= 25°C
See
nC
500 1400
T
J
= 125°C Fig. 7
di
f
/dt = 200A/µs
250
T
J
= 25°C
See
A/µs
170
T
J
= 125°C Fig. 8
6.60 (0.260)
6.10 (0.240)
12.70 (0.500)
REF.
50.80 (2.000)
REF.
4.95 (0.195)
DIA.
4.45 (0.175)
(7 PLCS.)
25.65 (1.010)
25.15 (0.990)
1
8.05 (0.317)
7.80 (0.307)
8.64 (0.340)
REF. (3 PLCS.)
22.86 (0.900)
REF.
2
3
1.14 (0.045)
0.76 (0.030)
13.21 (0.520)
12.70 (0.500)
11.43 (0.450)
REF.
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
3 - ANODE
BASE (ISOLATED)
Conforms to JEDEC Outline TO - 249AA
Dimensions in millimeters and inches
38.35 (1.510)
37.85 (1.490)
1.27 (0.050)
REF.
1.14 (0.045)
0.89 (0.035)
10.16 (0.400)
8.38 (0.330)
6.60 (0.260)
6.10 (0.240)
61.21 (2.410)
60.71 (2.390)
3.30 (0.130)
3.05 (0.120)
2
HFA60MC60C
1000
10000
PD-2.463 rev. B 03/99
Reverse Current - I
R
(µA)
1000
100
10
1
0.1
0.01
T = 150°C
J
T = 125°C
J
Instantaneous Forward Current - I
F
(A)
100
TJ = 25°C
0
200
400
600
T = 150°C
J
T
J
= 125°C
T
J
= 25°C
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
10
Fig. 2
- Typical Reverse Current vs. Reverse
Voltage, (per Leg)
1000
A
T = 25°C
J
100
1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
FM
(V)
Fig. 1
- Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
10
10
1
10
100
1000
Fig. 3
- Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
Reverse Voltage - V
R
(V)
Thermal Impedance - Z
thJC
(K/W )
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t2
Single Pulse
(Thermal Resistance)
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T = PDM x Z thJC + T
J
C
0.01
0.1
1
10
100
0.001
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4
- Maximum Thermal Impedance Z
thJC
Characteristics, (per Leg)
3
HFA60MC60C
PD-2.463 rev. B 03/99
150
40
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
120
30
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
t
rr
- (ns)
90
I
F
= 70A
I
F
= 30A
I
F
= 15A
t
rr
- (ns)
20
I
F
= 70A
I
F
= 30A
I
F
= 15A
60
10
30
100
di f /dt - (A/µs)
1000
0
100
di f /dt - (A/µs)
1000
Fig. 5
- Typical Reverse Recovery vs. di
f
/dt,
(per Leg)
1600
Fig. 6
- Typical Recovery Current vs. di
f
/dt,
(per Leg)
10000
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
1200
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
I
F
= 70A
di(rec)M/dt - (A/µs)
1000
I
F
= 15A
I
F
= 30A
I
F
= 70A
Q
RR
- (nC)
I
F
= 30A
800
I
F
= 15A
100
400
0
100
di
f
/dt - (A/µs)
1000
10
100
di
f
/dt - (A/µs)
1000
Fig. 7
- Typical Stored Charge vs. di
f
/dt,
(per Leg)
4
Fig. 8
- Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
HFA60MC60C
3
PD-2.463 rev. B 03/99
I
F
t
rr
t
a
t
b
4
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0
Q
rr
I
RRM
2
0.5 I
RRM
di(rec)M/dt
5
0.01
Ω
L = 70µH
D.U.T.
D
IRFP250
S
1
0.75 I
RRM
di
f
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
dif/dt
ADJUST G
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Fig. 9
- Reverse Recovery Parameter Test
Circuit
L = 100µH
HIGH-SPEED
SWITCH
Rg = 25 ohm
CURRENT
MONITOR
FREE-WHEEL
DIODE
+
Vd = 50V
Fig. 10
- Reverse Recovery Waveform and
Definitions
I
L(PK)
DUT
DECAY
TIME
V
(AVAL)
V
R(RATED)
Fig. 11
- Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS:
EUROPEAN HEADQUARTERS:
IR CANADA:
IR GERMANY:
IR ITALY:
IR FAR EAST:
IR SOUTHEAST ASIA:
IR TAIWAN:
233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
5
京公网安备 11010802033920号
EEWORLD
