a
FEATURES
Handles all GSM Baseband Power Management
Functions
Four LDOs Optimized for Specific GSM Subsystems
Charges Back-Up Capacitor for Real-Time Clock
Charge Pump and Logic Level Translators for 3 V and 5 V
GSM SIM Modules
Narrow Body 4.4 mm 28-Lead TSSOP Package
APPLICATIONS
GSM/DCS/PCS Handsets
TeleMatic Systems
ICO/Iridium Terminals
GSM Power Management System
ADP3404
FUNCTIONAL BLOCK DIAGRAM
VBAT
ADP3404
DIGITAL
LDO
VCC
RESET
PWRONKEY
ROWX
POWER-UP
SEQUENCING
AND
PROTECTION
LOGIC
RTC LDO
VRTC
PWRONIN
ANALOGON
RESCAP
XTAL OSC
LDO
VTCXO
GENERAL DESCRIPTION
The ADP3404 is a multifunction power management system IC
optimized for GSM cell phones. The wide input voltage range of
3.0 V to 7.0 V makes the ADP3404 ideal for both single cell
Li-Ion and three cell NiMH designs. The current consumption
of the ADP3404 has been optimized for maximum battery life,
featuring a ground current of only 230
µA
when the phone is in
standby (digital LDO, analog LDO, and SIM card supply active).
An undervoltage lockout (UVLO) prevents the startup when
there is not enough energy in the battery. All four integrated
LDOs are optimized to power one of the critical sub-blocks of the
phone. Their novel anyCAP
®
architecture requires only very
small output capacitors for stability, and the LDOs are insensitive
to the capacitors’ equivalent series resistance (ESR). This makes
them stable with any capacitor, including ceramic (MLCC) types
for space-restricted applications.
A step-up converter is implemented to supply both the SIM
module and the level translation circuitry to adapt logic signals
for 3 V and 5 V SIM modules. Sophisticated controls are avail-
able for power-up during battery charging, keypad interface and
charging of an auxiliary back-up capacitor for the real-time clock.
These allow an easy interface between ADP3404, GSM proces-
sor, charger, and keypad. Furthermore, a reset circuit and a
thermal shutdown function have been implemented to support
reliable system design.
CHRON
ANALOG
LDO
VCCA
SIMBAT
CAP+
CAP
SIMPROG
SIMON
SIMGND
REF
+
RESETIN
CLKIN
DATAIO
I/O CLK RST
DGND
LOGIC LEVEL
TRANSLATION
AGND
BUFFER
REFOUT
CHARGE
PUMP
VSIM
anyCAP is a registered trademark of Analog Devices, Inc.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
ADP3404–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
1
Parameter
SHUTDOWN SUPPLY CURRENT
VBAT = Low (UVLO Low)
VBAT = High (UVLO High)
OPERATING GROUND CURRENT
VCC, VRTC, VCCA, REFOUT On
VCC, VRTC, VCCA, REFOUT
and VSIM On
All LDOs and VSIM On
All LDOs and VSIM On
UVLO CHARACTERISTICS
UVLO On Threshold
UVLO Hysteresis
INPUT CHARACTERISTICS
Input High Voltage
PWRONIN and ANALOGON
PWRONKEY
Input Low Voltage
PWRONIN and ANALOGON
PWRONKEY
PWRONKEY INPUT PULLUP
RESISTANCE TO VBAT
CHRON CHARACTERISTICS
CHRON Threshold
CHRON Hysteresis Resistance
CHRON Input Bias Current
ROWX CHARACTERISTICS
ROWX Output Low Voltage
ROWX Output High Leakage
Current
SHUTDOWN
Thermal Shutdown Threshold
2
Thermal Shutdown Hysteresis
DIGITAL LDO (VCC)
Output Voltage
Line Regulation
Load Regulation
Output Capacitor
3
ANALOG LDO (VCCA)
Output Voltage
Line Regulation
Load Regulation
Output Capacitor
3
Dropout Voltage
Ripple Rejection
Output Noise Voltage
VCC
∆VCC
∆VCC
C
O
VCCA
∆VCCA
∆VCCA
C
O
V
DO
∆VBAT/
∆VCCA
V
NOISE
V
T
R
IN
I
B
V
OL
I
IH
Symbol
I
BAT
(–20 C
≤
T
A
≤
+85 C, VBAT = 3 V to 7 V, C
VBAT
= C
SIMBAT
= C
VSIM
= 10 F, C
VCC
= C
VCCA
= 2.2 F,
C
VRTC
= 0.1 F, C
VTCXO
= 0.22 F, C
VCAP
= 0.1 F, minimum loads applied on all outputs,
unless otherwise noted.)
Conditions
VBAT = 2.7 V
VBAT = 3.6 V, VRTC On
Min
Typ
3
12
175
230
260
15
3.2
200
Max
20
30
240
340
400
Unit
µA
µA
µA
µA
µA
mA
V
mV
I
GND
Minimum Loads, VBAT = 3.6 V
Minimum Loads, VBAT = 3.6 V
Minimum Loads, VBAT = 3.6 V
Maximum Loads, VBAT = 3.6 V
VBAT
UVLO
3.3
V
IH
2
0.7
V
IL
0.4
0.3
15
2.38
108
20
2.48
125
25
2.58
138
0.5
0.4
1
V
VBAT V
kΩ
V
kΩ
µA
V
µA
VBAT
V
V
2.38 < CHRON < V
T
CHRON > V
T
PWRONKEY = Low
I
OL
= 200
µA
PWRONKEY = High
V(ROWX) = 5 V
Junction Temperature
Junction Temperature
Line, Load, Temp
3 V < VBAT < 7 V, Min Load
50
µA
< I
LOAD
< 100 mA,
VBAT = 3.6 V
160
35
2.400
2.450 2.500
2
15
ºC
ºC
V
mV
mV
µF
2.2
Line, Load, Temp
3 V < VBAT < 7 V, Min Load
200
µA
< I
LOAD
< 130 mA,
VBAT = 3.6 V
V
O
= V
INITIAL
– 100 mV
I
LOAD
= 130 mA
f = 217 Hz (t = 4.6 ms)
VBAT = 3.6 V
f = 10 Hz to 100 kHz
I
LOAD
= 130 mA, VBAT = 3.6 V
2.710
2.765 2.820
2
15
215
65
70
75
V
mV
mV
µF
mV
dB
µV
rms
2.2
–2–
REV. 0
ADP3404
Parameter
CRYSTAL OSCILLATOR LDO (VTCXO)
Output Voltage
Line Regulation
Load Regulation
Output Capacitor
3
Dropout Voltage
Ripple Rejection
Output Noise Voltage
VOLTAGE REFERENCE (REFOUT)
Output Voltage
Line Regulation
Load Regulation
Ripple Rejection
Maximum Capacitive Load
Output Noise Voltage
REAL-TIME CLOCK LDO/BATTERY
CHARGER (VRTC)
Maximum Output Voltage
Current Limit
Off Reverse Leakage Current
SIM CHARGE PUMP (VSIM)
Output Voltage for 5 V SIM Modules
Output Voltage for 3 V SIM Modules
GSM/SIM LOGIC TRANSLATION
(GSM INTERFACE)
Input High Voltage (SIMPROG, SIMON,
RESETIN, CLKIN)
Input Low Voltage (SIMPROG, SIMON,
RESETIN, CLKIN)
DATAIO
Symbol
VTCXO
∆VTCXO
∆VTCXO
C
O
V
DO
∆VBAT/
∆VTCXO
V
NOISE
Conditions
Line, Load, Temp
3 V < VBAT < 7 V, Min Load
100
µA
< I
LOAD
< 5 mA,
VBAT = 3.6 V
V
O
= V
INITIAL
– 100 mV
I
LOAD
= 5 mA
f = 217 Hz (t = 4.6 ms)
VBAT = 3.6 V
f = 10 Hz to 100 kHz
I
LOAD
= 5 mA, VBAT = 3.6 V
Line, Load, Temp
3 V < VBAT < 7 V, Min Load
0
µA
< I
LOAD
< 50
µA,
VBAT = 3.6 V
f = 217 Hz (t = 4.6 ms),
VBAT = 3.6 V
f = 10 Hz to 100 kHz
VBAT = 3.6 V
Min
2.710
Typ
2.765
2
1
Max
2.820
Unit
V
mV
mV
µF
mV
dB
µV
rms
0.22
150
65
72
80
V
REFOUT
∆V
REFOUT
∆V
REFOUT
∆VBAT/
∆V
REFOUT
C
O
V
NOISE
1.192
1.210
2
0.5
75
1.228
V
mV
mV
dB
pF
µV
rms
65
100
40
VRTC
I
MAX
I
L
VSIM
VSIM
I
LOAD
≤
10
µA
2.0 V < VBAT < UVLO
0 mA
≤
I
LOAD
≤
10 mA
SIMPROG = High
0 mA
≤
I
LOAD
≤
6 mA
SIMPROG = Low
2.400
2.450
175
2.500
1
V
µA
µA
V
V
4.70
2.82
5.00
3.00
5.30
3.18
V
IH
V
IL
V
IL
V
OL
(I/O) = 0.4 V,
I
OL
(I/O) = 1 mA
V
OL
(I/O) = 0.4 V,
I
OL
(I/O ) = 0 mA
I
IH
, I
OH
=
±
10
µA
V
IL
= 0 V
V
IL
(I/O) = 0.4 V
VCC – 0.6
0.6
0.230
0.335
VCC – 0.4
–0.9
0.420
24
V
V
V
V
V
mA
V
kΩ
DATAIO Pull-Up Resistance to VCC
V
IH
, V
OH
I
IL
V
OL
R
IN
16
20
REV. 0
–3–
ADP3404–SPECIFICATIONS
Parameter
SIM INTERFACE
VSIM = 5 V
RST
RST
CLK
CLK
I/O
I/O
I/O
I/O
VSIM = 3 V
RST
RST
CLK
CLK
I/O
I/O
I/O
I/O
I/O Pull-Up Resistance to VSIM
Max Frequency (CLK)
Prop Delay (CLK)
Output Rise/Fall Times (CLK)
Output Rise/Fall Times (I/O, RST)
Duty Cycle (CLK)
RESET GENERATOR (RESET)
Output High Voltage
Output Low Voltage
Delay Time per Unit Capacitance
Applied to RESCAP Pin
Symbol
Conditions
Min
Typ
Max
Unit
V
OL
V
OH
V
OL
V
OH
V
IL
V
IH
, V
OH
I
IL
V
OL
V
OL
V
OH
V
OL
V
OH
V
IL
V
IH
, V
OH
I
IL
V
OL
R
IN
f
MAX
t
D
t
R
, t
F
t
R
, t
F
D
I = +200
µA
I = –20
µA
I = +200
µA
I = –20
µA
I
IH
, I
OH
=
±
20
µA
V
IL
= 0 V
I
OL
= 1 mA
DATAIO
≤
0.23 V
I = +200
µA
I = –20
µA
I = +20
µA
I = –20
µA
I
IH
, I
OH
=
±
20
µA
V
IL
= 0 V
I
OL
= 1 mA
DATAIO
≤
0.23 V
C
L
= 30 pF
C
L
= 30 pF
C
L
= 30 pF
D CLKIN = 50%
f = 5 MHz
I
OH
= –15
µA
I
OL
= –15
µA
0.6
VSIM – 0.7
0.5
0.7
VSIM
0.4
VSIM – 0.4
–0.9
0.4
V
V
V
V
V
V
mA
V
0.2
0.8
0.7
VSIM
0.2
VSIM
0.4
VSIM – 0.4
–0.9
0.4
8
5
10
30
9
47
12
50
18
1
53
VSIM
VSIM
V
V
V
V
V
V
mA
V
kΩ
MHz
ns
ns
µs
%
V
OH
V
OL
t
D
VCC – 0.3
0.3
1.0
V
V
ms/nF
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods .
2
This feature is intended to protect against catastrophic failure of the device. Maximum allowed operating junction temperature is 125
°C.
Operation beyond 125°C
could cause permanent damage to the device.
3
Required for stability.
Specifications subject to change without notice.
–4–
REV. 0
ADP3404
ABSOLUTE MAXIMUM RATINGS*
PIN FUNCTION DESCRIPTIONS
Voltage on Any Pin with Respect to Any
GND Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +10 V
Voltage on Any Pin May Not Exceed VBAT, with the
Following Exceptions: VRTC,
VSIM, CAP+, PWRONIN, I/O, CLK, RST
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Operating Temperature Range . . . . . . . . . . . –20
°
C to +85
°
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125
°
C
θ
JA
, Thermal Impedance (TSSOP-28) . . 4-Layer Board 68
°
C/W
θ
JA
, Thermal Impedance (TSSOP-28) . . 6-Layer Board 62
°
C/W
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300
°
C
*This
is a stress rating only, operation beyond these limits can cause the device to
be permanently damaged.
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Mnemonic
RESCAP
DGND
VTCXO
RESET
REFOUT
VCCA
AGND
VBAT
VCC
PWRONKEY
ANALOGON
PWRONIN
ROWX
CHRON
VRTC
CAP–
SIMBAT
DATAIO
RESETIN
CLKIN
SIMGND
I/O
RST
SIMPROG
SIMON
CLK
VSIM
CAP+
Function
Reset Delay Timing Cap
Digital Ground
Crystal Oscillator Low Dropout
Regulator
Main Reset
Reference Output
Analog Low Dropout Regulator
Analog Ground
Battery Input Voltage
Digital Low Dropout Regulator
Power-On/-Off Key
VTCXO Enable
Power On/Off Signal from
Microprocessor
Microprocessor Keyboard Output
Charger On/Off Input
Real-Time Clock Supply/Coin
Cell Battery Charger
Negative Side of Boost Capacitor
Battery Input for the SIM
Charge Pump
Non-Level-Shifted Bidirectional
Data I/O
Non-Level-Shifted SIM Reset
Non-Level-Shifted Clock
Charge Pump Ground
Level-Shifted Bidirectional SIM
Data Input/Output
Level-Shifted SIM Reset
VSIM Programming:
Low = 3 V, High = 5 V
VSIM Enable
Level-Shifted SIM Clock
SIM Supply
Positive Side of Boost Capacitor
PIN CONFIGURATION
RESCAP
1
DGND
2
VTCXO
3
RESET
4
28
CAP+
27
VSIM
26
CLK
25
SIMON
24
SIMPROG
23
RST
REFOUT
5
VCCA
6
AGND
7
VBAT
8
VCC
9
PWRONKEY
10
ANALOGON
11
PWRONIN
12
ROWX
13
CHRON
14
NARROW BODY
TSSOP-28
ADP3404
22
I/O
(Not To Scale)
21
SIMGND
20
CLKIN
19
RESETIN
18
DATAIO
17
SIMBAT
16
CAP–
15
VRTC
ORDERING GUIDE
Model
Temperature
Range
Package
Description
Package
Option
RU-28
ADP3404ARU –20
°
C to +85
°
C 28-Lead TSSOP
25
26
27
28
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADP3404 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–5–
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