2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
MMBT5088
MMBT5089
C
E
C
B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
2N5088
2N5089
2N5088
2N5089
Value
30
25
35
30
4.5
100
-55 to +150
Units
V
V
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
2N5088
2N5089
625
5.0
83.3
200
Max
*MMBT5088
*MMBT5089
350
2.8
357
Units
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
V
EB
= 4.5 V, I
C
= 0
5088
5089
5088
5089
5088
5089
30
25
35
30
50
50
50
100
V
V
V
V
nA
nA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, V
CE
= 5.0 V
5088
5089
5088
5089
5088
5089
300
400
350
450
300
400
900
1200
0.5
0.8
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
fe
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= 500
µA,V
CE
= 5.0 mA,
f = 20 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
V
BE
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
S
= 10 kΩ,
f = 10 Hz to 15.7 kHz
5088
5089
5088
5089
350
450
50
4.0
10
1400
1800
3.0
2.0
MHz
pF
pF
3
dB
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Typical Characteristics
1200
1000
800
600
25 °C
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
V
CE
= 5.0 V
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
0.15
0.1
0.05
0.1
25 °C
- 40 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
125 °C
- 40 °C
25 °C
0.8
0.6
0.4
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
25 °C
125 °C
β
= 10
0.4
V
CE
= 5.0 V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
40
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
f = 1.0 MHz
CAPACITANCE (pF)
4
3
C te
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
5
3
2
2
1
0
C ob
125 MHz
100 MHz
75 MHz
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
CHARACTERIS TIC S RELATI VE TO VALUE AT T
A
= 25 C
Normalized Collector-Cutoff Current
vs Ambient Temperature
5
NF - NOISE FIGURE (dB)
Wideband Noise Frequency
vs Source Resistance
V
CE
= 5.0 V
°
1000
4
3
2
1
0
BANDWIDTH = 15.7 kHz
100
I
C
= 100
µA
I
C
= 30
µA
3
10
I
C
= 10
µA
2,000
5,000
10,000
20,000
50,000
100,000
1
25
50
75
100
125
T
A
- AMBIE NT TEMPERATURE (
°
C)
150
1,000
R
S
- SOURCE RESISTANCE (
Ω
)
Noise Figure vs Frequency
10
P
D
- POWER DISSIPATION (mW)
Power Dissipation vs
Ambient Temperature
625
NF - NOISE FIGURE (dB)
8
I
C
= 200
µA,
R
S
= 10 kΩ
I
C
= 100
µA,
R
S
= 10 kΩ
I
C
= 1.0 mA,
R
S
= 500
Ω
TO-92
500
375
250
125
0
6
SOT-23
4
I
C
= 1.0 mA,
R
S
= 5.0 kΩ
V
CE
= 5.0V
2
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
3.0 dB
5,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
10,000
5,000
10,000
4.0 dB
2,000
1,000
500
V
CE
= 5.0 V
2.0 dB
2,000
6.0 dB
8.0 dB
10 dB
f = 100 Hz
BANDWIDTH
= 20 Hz
3.0 dB
1,000
4.0 dB
500
V
CE
= 5.0 V
f = 1.0 kHz
BANDWIDTH
200
= 200 Hz
6.0 dB
8.0 dB
200
100
12 dB
14 dB
100
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
5000
2000
1000
500
200
100
1
V
CE
= 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
R
S
- SOURCE RESISTANCE (
Ω
)
10000
1.0 dB
2.0 dB
3.0 dB
4.0 dB
6.0 dB
8.0 dB
Contours of Constant
Narrow Band Noise Figure
10000
5000
2000
1000
2.0 dB
3.0 dB
5.0
dB
6.0
dB
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1000
V
CE
=
4.0 dB
500
5.0V
f = 1.0 MHz
200
BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I
C
- COLLECTOR CURRENT (
µ
A)
10
京公网安备 11010802033920号
EEWORLD
