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CAT28C17ANA-20T

Description
128Kx8 EEPROM
Categorystorage    storage   
File Size123KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

CAT28C17ANA-20T Overview

128Kx8 EEPROM

CAT28C17ANA-20T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeQFJ
package instructionPLASTIC, LCC-32
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time200 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
length13.97 mm
memory density16384 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3.55 mm
Maximum standby current0.0001 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
width11.43 mm
Maximum write cycle time (tWC)10 ms
CAT28C17A
16 kb CMOS Parallel
EEPROM
Description
The CAT28C17A is a fast, low power, 5 V−only CMOS Parallel
EEPROM organized as 2K x 8−bits. It requires a simple interface for
in−system programming. On−chip address and data latches, self−timed
write cycle with auto−clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware. DATA Polling and
a RDY/BSY pin signal the start and end of the self−timed write cycle.
Additionally, the CAT28C17A features hardware write protection.
The CAT28C17A is manufactured using ON Semiconductor’s
advanced CMOS floating gate technology. It is designed to endure
10,000 program/erase cycles and has a data retention of 10 years. The
device is available in JEDEC approved 28−pin DIP and SOIC or
32−pin PLCC packages.
Features
http://onsemi.com
SOIC−28
J, K, W, X SUFFIX
CASE 751BM
Fast Read Access Times: 200 ns
Low Power CMOS Dissipation:
– Active: 25 mA Max.
– Standby: 100
mA
Max.
Simple Write Operation:
– On−chip Address and Data Latches
– Self−timed Write Cycle with Auto−clear
Fast Write Cycle Time: 10 ms Max
End of Write Detection:
DATA Polling
RDY/BSY Pin
Hardware Write Protection
CMOS and TTL Compatible I/O
10,000 Program/Erase Cycles
10 Year Data Retention
Commercial, Industrial and Automotive Temperature Ranges
PDIP−28
P, L SUFFIX
CASE 646AE
PLCC−32
N, G SUFFIX
CASE 776AK
PIN FUNCTION
Pin Name
A
0
−A
10
I/O
0
−I/O
7
RDY/BUSY
CE
OE
WE
V
CC
V
SS
NC
Function
Address Inputs
Data Inputs/Outputs
Ready/BUSY Status
Chip Enable
Output Enable
Write Enable
5 V Supply
Ground
No Connect
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
December, 2009
Rev. 4
1
Publication Order Number:
CAT28C17A/D
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