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JANS1N757A1

Description
ZENER DIODE,SINGLE, TWO TERMINAL,9.1V V(Z),5%,DO-35
CategoryDiscrete semiconductor    diode   
File Size70KB,19 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS1N757A1 Overview

ZENER DIODE,SINGLE, TWO TERMINAL,9.1V V(Z),5%,DO-35

JANS1N757A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance6 Ω
Number of components1
Maximum power dissipation0.4 W
Nominal reference voltage9.1 V
surface mountNO
Maximum voltage tolerance5%
Working test current20 mA
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 08 October 1999.
INCH-POUND
MIL-PRF-19500/127N
09 July 1999
SUPERSEDING
MIL-S-19500/127M
14 March 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND
1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1
THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1
THROUGH 1N759D-1, 1N4370DUR-1 THROUGH 1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.3).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage
tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two level of product assurance is provided for die.
1.2 Physical dimensions. See 3.3 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures 3 and 4 for die.
1.3 Maximum ratings. Maximum ratings are as shown in column 4 table II herein and as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
-65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 table II herein and as
follows:
2.4 V dc
V
Z
12 v dc
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±
5 percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±
2 percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±
1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250
°
C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100
°
C/W maximum. Junction to end-caps (D0-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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