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BZX85B4V7RL2

Description
4.7V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS, CASE 59-03, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size56KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZX85B4V7RL2 Overview

4.7V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS, CASE 59-03, 2 PIN

BZX85B4V7RL2 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeDO-41
package instructionO-LALF-W2
Contacts2
Manufacturer packaging codeCASE 59-03
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
Maximum knee impedance600 Ω
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
Maximum reverse current3 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2%
Working test current2.7 mA
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
1–1.3 Watt DO-41 Glass
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
BZX85C3V3RL
SERIES
1–1.3 WATT
DO-41 GLASS
1 WATT
ZENER REGULATOR
DIODES
3.3–100 VOLTS
One Watt Hermetically Sealed Glass
Silicon Zener Diodes
Specification Features:
Complete Voltage Range — 3.3 to 100 Volts
DO-41 Package
Double Slug Type Construction
Metallurgically Bonded Construction
Oxide Passivated Die
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from
case for 10 seconds
FINISH:
All external surfaces are corrosion resistant with readily solderable leads
POLARITY:
Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Seoul, Korea
MAXIMUM RATINGS
Rating
DC Power Dissipation @ TA = 50°C
Derate above 50°C
Operating and Storage Junction Temperature Range
Symbol
PD
TJ, Tstg
CASE 59-03
DO-41
GLASS
Value
1
6.67
– 65 to +200
Unit
Watt
mW/°C
°C
1.25
PD, MAXIMUM DISSIPATION (WATTS)
L = 1″
L = 1/8″
L = 3/8″
0.75
L = LEAD LENGTH
TO HEAT SINK
1
0.5
0.25
0
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-1
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