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MT46V16M16P-5BIT:F

Description
16M X 16 DDR DRAM, 0.7 ns, PDSO66
Categorystorage   
File Size3MB,93 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Download Datasheet Parametric View All

MT46V16M16P-5BIT:F Overview

16M X 16 DDR DRAM, 0.7 ns, PDSO66

MT46V16M16P-5BIT:F Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals66
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage2.7 V
Minimum supply/operating voltage2.5 V
Rated supply voltage2.6 V
Processing package description0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
surface mountYes
Terminal formGULL WING
Terminal spacing0.6500 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width16
organize16M X 16
storage density2.68E8 deg
operating modeSYNCHRONOUS
Number of digits1.68E7 words
Number of digits16M
Access methodFOUR BANK PAGE BURST
Memory IC typeDDR DRAM
Number of ports1
Minimum access time0.7000 ns
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(Commercial & Industrial)
16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
Marking
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
• Plastic package – OCPL
66-pin TSOP
TG
66-pin TSOP (Pb-free)
P
• Plastic package
FG
1
60-ball FBGA (8mm x 14mm)
BG
1
60-ball FBGA (8mm x 14mm) (Pb-free)
CV
2
60-ball FBGA (8mm x 12.5mm)
CY
2
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400B)
-5B
6ns @ CL = 2.5 (DDR333) FBGA only
-6
6ns @ CL = 2.5 (DDR333) TSOP only
-6T
-75E
1
7.5ns @ CL = 2 (DDR266)
-75Z
1
7.5ns @ CL = 2 (DDR266A)
-75
1
7.5ns @ CL = 2.5 (DDR266B)
• Self refresh
Standard
None
Low-power self refresh
L
• Temperature rating
Commercial (0°C to +70°C)
None
Industrial (–40°C to +85°C)
IT
Automotive (–40°C to +105°C)
AT
4
• Revision
:G
3
x4, x8
:F
3
x16
x4, x8, x16
:K
Notes: 1. Only available on Revision F and G.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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