1A, 40V, SILICON, SIGNAL DIODE
| Parameter Name | Attribute value |
| Maker | NXP |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Maximum output current | 1 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 40 V |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BYV10-40143 | BYV10-30143 | BYV10-20143 | |
|---|---|---|---|
| Description | 1A, 40V, SILICON, SIGNAL DIODE | 1A, 30V, SILICON, SIGNAL DIODE | 1A, 20V, SILICON, SIGNAL DIODE |
| Maker | NXP | NXP | NXP |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Maximum output current | 1 A | 1 A | 1 A |
| Package body material | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 40 V | 30 V | 20 V |
| surface mount | NO | NO | NO |
| technology | SCHOTTKY | SCHOTTKY | SCHOTTKY |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL |
| package instruction | - | O-LALF-W2 | O-LALF-W2 |
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