Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Central Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 12 pF |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| VCEsat-Max | 0.5 V |
| CZT3019TR13LEADFREE | CZT3019TRLEADFREE | CZT3019TR13 | CZT3019BKLEADFREE | CZT3019BK | |
|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, |
| Is it lead-free? | Lead free | Lead free | Contains lead | Lead free | Contains lead |
| Is it Rohs certified? | conform to | conform to | incompatible | conform to | incompatible |
| Maker | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | compliant | compliant | unknown | compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A |
| Collector-based maximum capacity | 12 pF | 12 pF | 12 pF | 12 pF | 12 pF |
| Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 100 | 100 | 100 | 100 |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609 code | e3 | e3 | e0 | e3 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 2 W | 2 W | 2 W | 2 W | 2 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 10 | 10 | NOT SPECIFIED | 10 | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | - | SMALL OUTLINE, R-PDSO-G4 | - |
| Humidity sensitivity level | 1 | 1 | - | 1 | - |
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