UNISONIC TECHNOLOGIES CO., LTD
MCR101
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thrusters, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
SCR
FEATURES
*Sensitive Gate Allows Triggering by Micro Controllers and other
Logic Circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
*Immunity to dV/dt – 20V/μsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and Uniformity
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
Halogen Free
MCR101-x-xx-T92-B MCR101L-x-xx-T92-B MCR101G-x-xx-T92-B
MCR101-x-xx-T92-K MCR101L-x-xx-T92-K MCR101G-x-xx-T92-K
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
A
K
G
A
K
Packing
Tape Box
Bulk
Note: Pin Assignment: G: Gate A: Anode K: Cathode
MCR101L-x-xx-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(4)Peak Voltage
(5)Lead Plating
(1) B: Tape Reel, K: Bulk
(2) T92: TO-92
(3) xx: refer to Classification of I
GT
(4) 4: 200V, 6: 400V, 8: 600V
(5) L: Lead Free Plating, Blank: Pb/Sn
(5)
G: Halogen Free
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Copyright © 2010 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note)
(T
J
=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate
Open)
SYMBOL
RATINGS
200
400
600
0.8
SCR
UNIT
MCR101-4
V
MCR101-6 V
DRM
,V
RRM
MCR101-8
On-Sate RMS Current (Tc=80°C) 180° Condition Angles
I
T(RMS)
A
Peak Non-Repetitive Surge Current
I
TSM
10
A
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°C)
Circuit Fusing Considerations (t=8.3 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power (T
A
=25°C, Pulse Width
≤1.0μs)
P
GM
0.1
W
Forward Average Gate Power (T
A
=25°C, t=8.3ms)
P
G(AV)
0.1
W
Peak Gate Current – Forward (T
A
=25°C, Pulse Width≤1.0μs)
I
GM
1
A
Peak Gate Voltage – Reverse (T
A
=25°C, Pulse Width≤1.0μs)
V
GRM
5
V
Operating Junction Temperature @ Rated V
RRM
and V
DRM
T
J
-40 ~ +110
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
200
75
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Peak Forward or Reverse
Tc=25°C
I
DRM
, I
RRM
V
D
=Rated V
DRM
and V
RRM
; R
GK
=1kΩ
Blocking Current
Tc=125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
V
TM
I
TM
=1A Peak @ T
A
=25°C
Gate Trigger Current (Continuous
I
GT
V
AK
=7Vdc, R
L
=100Ω, T
C
=25°C
dc)(note2)
Tc=25
°C
Holding Current (note 3)
I
H
V
AK
=7Vdc, initiating current=20mA
Tc=-40
°C
Tc=25°C
Latch Current
I
L
V
AK
=7V, Ig=200μA
Tc=-40
°C
Gate Trigger Current
Tc=25
°C
V
GT
V
AK
=7Vdc, R
L
=100Ω
(continuous dc) (Note 2)
Tc=-40
°C
DYNAMIC CHARACTERISTICS
V
D
=Rated V
DRM
, Exponential
Critical Rate of Rise of Off-State Voltage
dV/dt
Waveform, R
GK
=1000Ω, T
J
=110°C
I
PK
=20A, Pw=10μsec
Critical Rate of Rise of On-State Current
di/dt
diG/dt=1A/μsec, Igt=20mA
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle
≤1%
2. R
GK
=1000Ω included in measurement.
3. Does not include R
GK
in measurement.
MIN
TYP MAX UNIT
10
100
1.7
40
0.5
0.6
0.62
200
5
10
10
15
0.8
1.2
μA
V
μA
mA
mA
V
20
35
50
V/μs
A/μs
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VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
SCR
+ Voltage
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode -
I
DRM
at V
DRM
Forward Blocking Region
(off state)
CLASSIFICATION OF I
GT
RANK
RANGE
B
48~105μA
C
95~200μA
AA
8~16μA
AB
14~21μA
AC
19~25μA
AD
23~52μA
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TYPICAL CHARACTERISTICS
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
80
70
60
50
40
30
20
10
-40 -25 -10 5
20 25 50 65 80 95 110
Gate Trigger Voltage (Volts)
Gate Trigger Current (μA)
90
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
SCR
20 25 50 65 80 95 110
Junction Temperature, T
J
(℃)
Junction Temperature, T
J
(℃)
UNISONIC TECHNOLOGIES CO., LTD
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Instantaneous On-State Current, I
T
(AMPS)
Maximum Allowable Case
Temperature, T
C
(℃)
Latching Current (μA)
Holding Current (μA)
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SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R301-009,C
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