D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
FGA90N33AT 330V, 90A PDP Trench IGBT
April 2008
FGA90N33AT
330V, 90A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.1V @ I
C
= 20A
• High input impedance
• Fast switching
• RoHS compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
C pulse(1)
I
C pulse(2)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Ratings
330
±
30
90
220
330
223
89
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
o
C
o
o
C
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
Max.
0.56
40
Units
o
C/W
o
C/W
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I
C
pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA90N33AT Rev. A
FGA90N33AT 330V, 90A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA90N33AT
Device
FGA90N33ATTU
Package
TO-3P
Packaging
Type
Tube
Max Qty
Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage V
GE
= 0V, I
C
= 250µA
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
330
-
-
-
-
-
-
250
±400
V
µA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250µA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
I
C
= 45A
,
V
GE
= 15V,
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 90A
,
V
GE
= 15V,
T
C
= 25
o
C
I
C
= 90A
,
V
GE
= 15V,
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
-
-
-
2200
135
100
-
-
-
pF
pF
pF
2.5
-
-
-
-
4.0
1.1
1.3
1.6
1.7
5.5
1.4
-
-
-
V
V
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 200V, I
C
= 20A,
V
GE
= 15V
V
CC
= 200V, I
C
= 20A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 125
o
C
V
CC
= 200V, I
C
= 20A,
R
G
= 5Ω, V
GE
= 15V,
Resistive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
23
40
100
180
20
40
110
250
95
12
40
-
-
-
240
-
-
-
300
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGA90N33AT Rev. A
2
www.fairchildsemi.com
FGA90N33AT 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T
C
= 25 C
o
Figure 2. Typical Output Characteristics
160
T
C
= 125 C
o
20V
15V
10V
9V
20V
15V
12V
10V
9V
8V
Collector Current, I
C
[A]
Collector Current, I
C
[A]
120
12V
8V
120
80
7V
80
7V
40
40
V
GE
= 6V
V
GE
= 6V
0
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
5
0
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
5
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
V
GE
= 15V
Figure 4. Transfer Characteristics
160
Common Emitter
V
CE
= 20V
120
Collector Current, I
C
[A]
Collector Current, I
C
[A]
T
C
= 25 C
T
C
= 125 C
o
o
T
C
= 25 C
o
120
T = 125
o
C
C
80
80
40
40
0
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
4
0
0
2
4
6
8
10
Gate-Emitter Voltage,V
GE
[V]
12
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, V
CE
[V]
Common Emitter
V
GE
= 15V
Figure 6. Saturation Voltage vs. V
GE
20
Collector-Emitter Voltage
,
V
CE
[V]
Common Emitter
T
C
= 25 C
o
1.8
90A
16
1.6
1.4
1.2
1.0
0.8
25
40A
12
8
90A
I
C
= 20A
4
40A
I
C
= 20A
50
75
100
125
o
Collector-EmitterCase Temperature, T
C
[
C
]
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
FGA90N33AT Rev. A
3
www.fairchildsemi.com
FGA90N33AT 330V, 90A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
20
Common Emitter
o
Figure 8. Capacitance Characteristics
4000
Common Emitter
V
GE
= 0V, f = 1MHz
Collector-Emitter Voltage, V
CE
[
V
]
T
C
= 125 C
16
Capacitance [pF]
3000
C
ies
T
C
= 25 C
o
12
2000
C
oes
C
res
8
40A
1000
90A
4
I
C
= 20A
0
0
4
8
12
16
Gate-Emitter Voltage, V
GE
[V]
20
0
0.1
1
10
Collector-Emitter Voltage, V
CE
[V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
500
100
Collector Current, I
c
[A]
10
µ
s
100
µ
s
Gate-Emitter Voltage, V
GE
[V]
T
C
= 25 C
12
10
1ms
10 ms
DC
9
V
CC
= 100V
200V
6
1
*Notes:
3
0.1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0
0
20
40
60
Gate Charge, Q
g
[nC]
80
100
0.01
1
10
100
Collector-Emitter Voltage, V
CE
[V]
500
Figure 11. Turn-on Characteristics vs.
Gate Resistance
200
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
o
T
C
= 25 C
o
T
C
= 125 C
100
Switching Time [ns]
t
d(on)
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25 C
T
C
= 125 C
o
o
Switching Time [ns]
t
r
1000
t
d(off)
t
f
100
10
0
20
40
60
80
Gate Resistance, R
G
[
Ω
]
100
10
0
20
40
60
Gate Resistance, R
G
[
Ω
]
80
100
FGA90N33AT Rev. A
4
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
