FMM5117X
20-32GHz Downconverter MMIC
FEATURES
•
•
•
•
Integrated Monolithic Downconverter
High Linearity
Single Supply Voltage Operation
High Reliability
DESCRIPTION
The FMM5117X is a double, single balanced diode mixer
downconverter designed for applications in the 20 to 32GHz
frequency range. The device consists of a low noise mixer,
LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios,
local multi-point distribution systems (LMDS) and satellite communications, as it offers a
high dynamic range over a large bandwidth.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
DC Supply Voltage
Input Power
Input Power
Storage Temperature
Symbol
V
DD1,2
P
inRF
P
inLO
T
stg
Rating
8
20
10
-65 to +175
Unit
V
dBm
dBm
°C
RECOMMENDED OPERATING CONDITIONS
Item
DC Supply Voltage
Input LO Power Level
Operating Backside Temperature
Note 1:
This product should be hermetically packaged.
Symbol
V
DD1,2
P
inLO
Tbs
Min.
0.0
-45
Recommend
Typ.
5.0
3.0
25
Max.
5.0
110
Unit
V
dBm
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
RF Frequency Range
LO Frequency Range
IF Frequency Range (Note 2)
Conversion Gain
Conversion Gain Flatness
(fixed f
IF
, swept f
LO
) (f
IF
=1.0GHz)
Conversion Gain Flatness
(fixed f
LO
, swept f
IF
) (f
LO
=13.5GHz)
Return Loss (RF/LO)
Return Loss (IF)
Input P1dB at RF Port
3rd Order Input Intercept Point
DC Current Consumption
RF Current Consumption
Symbol
f
RF
f
LO
f
IF
G
∆G
∆G
RL
RF
, RL
LO
RL
IF
P1dB
RFIN
IIP3
I
DC
I
RF
V
DD1,2
=5V,
V
GG
=0V,
P
LO
=3dBm,
P
RF
=0dBm
Conditions
Limits
Min. Typ. Max.
20
-
32
9.5
0.1
-18
-
-
-
-
-
-
-
-
-
-
-10
5
2
12
4
15
23
100
140
16.5
3
-
-
-
-
-
-
-
150
200
Unit
GHz
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
mA
mA
Note 1:
The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)
Note 2:
The IF frequency range is dependent on the selected LO and RF frequency.
Edition 1.3
May 2003
FMM5117X
20-32GHz Downconverter MMIC
CONVERSION GAIN (LSB) vs. FREQUENCY
-2
-4
Conversion Gain (LSB) (dB)
-6
-8
-10
-12
-14
-16
-18
-20
CONVERSION GAIN (USB) vs. FREQUENCY
-2
-4
Conversion Gain (USB) (dB)
-6
-8
-10
-12
-14
-16
-18
-20
V
DD1,2
=5V,
P
LO
=
3dBm,
P
RF
=0dBm
f
IF
=1GHz
f
IF
=2GHz
f
IF
=3GHz
V
DD1,2
=5V,
P
LO
=
3dBm,
P
RF
=0dBm
f
IF
=1GHz
f
IF
=2GHz
f
IF
=3GHz
18
20
22
24
26
28
30
32
34
36
18
20
22
24
26
28
30
32
34
36
2 x LO Frequency (GHz)
2 x LO Frequency (GHz)
2xLO OUTPUT POWER vs. FREQUENCY
0
-5
2x LO Output Power (dBm)@RF Port
-10
-15
-20
-25
-30
-35
-50
-40
9
10
11
12
13
14
15
16
17
-60
9
LO Frequency (GHz)
V
DD1,2
=5V
P
LO
=3dBm,
P
RF
=0dBm,
f
IF
=1GHz,
IM3 vs. FREQUENCY
30
IIP3
20
IM3 Suppression (dBc) / IIP3 (dBm)
10
0
V
DD1,2
=5V,
-10
-20
-30
-40
f
IF
=1GHz
∆f=10MHz
PL
O
=3dBm,
P
RF
=0dBm,
IM3
11
13
LO Frequency (GHz)
15
RF RETURN LOSS vs. FREQUENCY
RF Return Loss; f
IF
=1GHz
IF RETURN LOSS vs. FREQUENCY
f
LO
=13GHz
-5
-2
-10
RF Return Loss (dB)
IF Return Loss (dB)
20
22
24
26
28
30
32
-4
-15
-6
-20
-25
-8
0.5
1
1.5
2
2.5
3
3.5
4
RF Frequency (GHz)
IF Frequency (GHz)
FMM5117X
20-32GHz Downconverter MMIC
CHIP OUTLINE
V
DD1
2260
2045
1775
1690
RF
V
DD2
Unit:
µm
LO
Chip Size: 3.085mm x 2.26mm
Chip Thickness: 110µm (Typ.)
Pad Dimensions: 1. RF: 80 x 160µm
2. V
DD1
: 80 x 80µm
3. V
DD2
: 100 x 100µm
4. LO: 80 x 160µm
5. V
GG
: 100 x 100µm
6. IF: 80 x 120µm
460
190
0
IF
0190
1195
2135 2300
2865 3085
V
GG
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