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FGPF120N30 300V, 120A PDP IGBT
January 2006
FGPF120N30
300V, 120A PDP IGBT
Features
•
•
•
•
High Current Capability
Low saturation voltage : V
CE(sat)
= 1.1 V @ I
C
= 25A
High input impedance
Fast switching
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of
IGBTs provides low conduction and switching loss. The PWD
series offers the optimum solution for PDP applications where
low condution loss is essential.
Application
PDP SYSTEM
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
C_pulse (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulse Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
FGPF120N30
300
±
20
120
180 *
60
24
-55 to +150
-55 to +150
300
Units
V
V
A
A
W
W
°C
°C
°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
* Ic_pulse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
2.1
62.5
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF120N30 Rev. A
FGPF120N30 300V, 120A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF120N30
Device
FGPF120N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 250uA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
300
--
--
--
--
0.6
--
--
--
--
100
± 250
V
V/°C
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 250uA, V
CE
= V
GE
I
C
= 25A
,
V
GE
= 15V
I
C
= 120A
,
V
GE
= 15V
T
C
= 25°C
I
C
= 120 A
,
V
GE
= 15V
T
C
= 125°C
2.5
--
--
--
4.0
1.1
1.9
2.1
5.0
1.4
--
--
V
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2190
310
98
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 200 V, I
C
= 25A,
R
G
= 8.7Ω, V
GE
= 15V,
Resistive Load, T
C
= 25°C
V
CC
= 200 V, I
C
= 25 A,
R
G
= 8.7Ω, V
GE
= 15V,
Resistive Load, T
C
= 125°C
V
CE
= 200 V, I
C
=25A,
V
GE
= 15V
--
--
--
--
--
--
--
--
--
--
--
35
140
120
140
35
140
130
280
112
14
50
--
--
--
350
--
--
--
--
168
21
75
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGPF120N30 Rev. A
2
www.fairchildsemi.com
FGPF120N30 300V, 120A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
20V
15V
12V
T
C
= 25 C
100
o
Figure 2. Typical Output Characteristics
120
20V
15V
12V
10V
T
C
= 125 C
o
100
Collector Current, I
C
[A]
80
10V
Collector Current, I
C
[A]
80
8V
60
8V
60
40
40
20
V
GE
= 6V
0
0
1
2
3
4
5
6
20
V
GE
= 6V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V
CE
[V]
C ollector-E m itter V oltage, V
C E
[V ]
Figure 3 Typical Saturation Voltage
Characteristics
120
C o m m o n E m itter
V
Ge
= 1 5 V
Tc = 25 C
o
Tc = 125 C
o
Figure 4. Transfer Characteristics
120
V
CE
= 2 0 V
100
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
80
80
60
60
125 C
25 C
20
o
o
40
40
20
0
0
1
2
3
0
0
2
4
6
8
10
12
C o llector-E m itte r V o lta ge , V
C E
[V ]
G ate -E m itte r V olta ge, V
G E
[V ]
Figure 5. Saturation Voltage vs Case
Temperature at Variant Current Level
2.2
2.0
120A
Figure 6. Saturation Voltage vs. Vge
6
C om m on E m itter
o
T
C
= 25 C
Collector-Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
1.8
1.6
1.4
1.2
25A
1.0
0.8
0.6
0
25
50
75
100
o
[V]
50A
5
4
3
120A
2
25A
1
12.5A
50A
I
c
= 12.5A
125
150
0
6
8
10
12
14
16
18
20
C ase Tem perature, T
C
( C )
G ate - E m itter V oltage, V
G E
[V ]
FGPF120N30 Rev. A
3
www.fairchildsemi.com
FGPF120N30 300V, 120A PDP IGBT
Figure 7. Saturation Voltage vs. Vge
6
C o m m o n E m itte r
o
T
C
= 125 C
Figure 8. Capacitance Characteristics
Cies
CE
[V]
5
Capacitance [pF]
Collector - Emitter Voltage, V
4
1000
Coes
3
120A
Cres
2
25A
1
1 2 .5 A
0
6
8
50A
100
Com m on Em itter
V
GE
= 0V, f = 1M Hz
T
C
= 25 C
o
10
12
14
16
18
20
0
5
10
15
20
25
30
G a te - E m itter V oltage, V
G E
[V ]
C ollector-Emitter Voltage, V
CE
[V]
Figure 9. Gate Charge
15
C o m m o n E m itte r
R
L
= 10 ohm
T
C
= 25 C
o
Figure 10. SOA Characteristics
Gate-Emitter Voltage, V
GE
[V]
100
Ic M A X (P u ls e d )
Ic M A X (C o n tin u o u s )
50
µ
s
100
µ
s
1m s
*
10
Vcc = 200V
Collector Current, Ic [A]
10
D C O p e ra tio n
5
1
S in g le N o n re p e titiv e
o
P u ls e T c = 2 5 C
C u rv e s m u s t b e d e ra te d
lin e a rly w ith in c re a s e
in te m p e ra tu re
0 .1
1
10
100
1000
0
0
20
40
60
80
100
120
0 .1
G ate C harge, Q
g
[nC ]
C o lle c to r - E m itte r V o lta g e , V
C E
[V ]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
1000
Com m on Em itter
V
C C
= 200V, V
GE
= 15V
I
C
= 25A
T
C
= 25 C
T
C
= 125 C
o
o
Figure 12. Turn-Off Characteristics
Gate Resistance
Com m on Em itter
V
C C
= 200V, V
GE
= 15V
1000
I
C
= 25A
T
C
= 25 C
T
C
= 125 C
o
o
Switching Time [ns]
100
td(on)
Switching Time [ns]
tr
tf
tf
100
td(off)
10
1
10
100
1
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
FGPF120N30 Rev. A
4
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