8-Channel Low Capacitance ESD
Protection Arrays
CM1293
Features
•
Eight channels of ESD protection
Note: For 2 and 4 channel devices, see the
CM1293A datasheet.
Provides ESD protection to IEC61000-4-2
•
±8kV contact discharge
Low loading capacitance of 2.0pF max.
Low clamping voltage
Channel I/O to I/O capacitance 1.5pF typical
Zener diode protects supply rail and eliminates
the need for external by-pass capacitors
Each I/O pin can withstand over 1000 ESD
strikes*
Available in MSOP, lead-free packaging
Product Description
The CM1293 family of diode arrays has been
designed to provide ESD protection for electronic
components or sub-systems requiring minimal
capacitive loading. These devices are ideal for
protecting systems with high data and clock rates or
for circuits requiring low capacitive loading. Each
ESD channel consists of a pair of diodes in series
which steer the positive or negative ESD current
pulse to either the positive (V
P
) or negative (V
N
)
supply rail. A Zener diode is embedded between V
P
and V
N
, offering two advantages. First, it protects the
V
CC
rail against ESD strikes, and second, it eliminates
the need for a bypass capacitor that would otherwise
be needed for absorbing positive ESD strikes to
ground. The CM1293 will protect against ESD pulses
up to ( 8kV contact discharge) per the IEC 61000-4-2
Level 4 standard.
This device is particularly well-suited for protecting
systems using high-speed ports such as USB2.0,
IEEE1394 (Firewire
®
, iLink
™
), Serial ATA, DVI,
HDMI and corresponding ports in removable storage,
digital camcorders, DVD-RW drives and other
applications
where
extremely
low
loading
capacitance with ESD protection are required in a
small package footprint.
•
•
•
•
•
•
•
Applications
•
•
•
•
DVI ports, HDMI ports in notebooks, set top
boxes, digital TVs, LCD displays
Serial ATA ports in desktop PCs and hard disk
drives
PCI Express ports
General purpose high-speed data line ESD
protection
Block Diagram
*
Standard test condition is
IEC61000-4-2 level 4 test circuit with each pin subjected to ±8kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one
continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes.
©2010 SCILLC. All rights reserved.
April 2010 – Rev. 3
Publication Order Number:
CM1293/D
CM1293
Ordering Information
PART NUMBERING INFORMATION
Lead-free Finish
# of Channels
8
Leads
10
Package
MSOP-10
Ordering Part
Number
1
CM1293-08MR
Part Marking
D039
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating Supply Voltage (V
P
- V
N
)
Operating Temperature Range
Storage Temperature Range
DC Voltage at any channel input
RATING
6.0
-40 to +85
-65 to +150
(V
N
- 0.5) to (V
P
+ 0.5)
UNITS
V
°C
°C
V
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
Package Power Rating
MSOP-10 Package (CM1293-08MR)
RATING
-40 to +85
UNITS
°C
400
mW
Rev. 3 | Page 3 of 10 | www.onsemi.com
CM1293
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
V
P
I
P
V
F
PARAMETER
Operating Supply Voltage (V
P
-V
N
)
Operating Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
(V
P
-V
N
)=3.3V
I
F
= 8mA; T
A
=25°C
0.60
0.60
T
A
=25°C; V
P
=5V, V
N
=0V
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V
0.80
0.80
±0.1
1.0
0.95
0.95
±1.0
1.5
V
V
μA
pF
CONDITIONS
MIN
TYP
3.3
MAX
5.5
8.0
UNITS
V
μA
I
LEAK
C
IN
Δ
C
IN
Channel Input Capacitance
Matching
Mutual Capacitance between
signal pin and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000-4-2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V
0.02
pF
C
MUTUAL
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V
0.11
pF
V
ESD
Notes 3 and 4; T
A
=25°C
±8
kV
V
CL
T
A
=25°C, I
PP
= 1A, t
P
= 8/20μs;
Notes 4
+8.8
-1.4
V
V
Ω
Ω
R
DYN
I
PP
= 1A, t
P
= 8/20μs
Any I/O pin to Ground; Note 4
0.7
0.4
Note 1:
Note 2:
Note 3:
Note 4:
All parameters specified at T
A
= -40°C to +85°C unless otherwise noted.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 3.3V, V
N
grounded.
Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω, V
P
= 3.3V, V
N
grounded.
These measurements performed with no external capacitor on V
P
(V
P
floating).
Rev.
3
| Page 4 of 10 | www.onsemi.com
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