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IXTH180N10T

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size246KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXTH180N10T Overview

Power Field-Effect Transistor,

IXTH180N10T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instruction,
Reach Compliance Codeunknown
JESD-609 codee1
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Preliminary Technical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH180N10T
IXTQ180N10T
V
DSS
I
D25
R
DS(on)
= 100
V
= 180
A
6.4 mΩ
TO-247 (IXTH)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Transient
T
C
= 25° C
Lead Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
175° C, R
G
= 3.3
T
C
= 25° C
Maximum Ratings
100
100
±
30
180
75
450
25
750
3
480
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
G
D
G
D
S
(TAB)
TO-3P (IXTQ)
S
D = Drain
TAB = Drain
(TAB)
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
300
260
1.13 / 10 Nm/lb.in.
5.5
6
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°
C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
100
2.5
4.5
±
200
5
250
5.4
6.4
V
V
nA
µA
µA
m
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
DS99712 (11/06)

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