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2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: I
C
= 17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : V
CEO
=250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SA1943/FJL4215.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts
1
TO-264
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
T
a
= 25°C unless otherwise noted
Parameter
Ratings
250
250
5
17
1.5
150
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Total Device Dissipation(T
C
=25°C)
Derate above 25°C
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
R
θJC
* Device mounted on minimum pad size
T
a
=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
0.83
Units
°C/W
h
FE
Classification
Classification
h
FE1
R
55 ~ 110
O
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C
1
www.fairchildsemi.com
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Electrical Characteristics*
T =25°C unless otherwise noted
a
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=5mA, I
E
=0
I
C
=10mA, R
BE
=∞
I
E
=5mA, I
C
=0
V
CB
=230V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=7A
I
C
=8A, I
B
=0.8A
V
CE
=5V, I
C
=7A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
Min.
250
250
5
Typ.
Max.
Units
V
V
V
5.0
5.0
55
35
60
0.4
1.0
30
200
3.0
1.5
160
µA
µA
V
V
MHz
pF
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SC5200RTU
2SC5200OTU
FJL4315RTU
FJL4315OTU
Marking
C5200R
C5200O
J4315R
J4315O
Package
TO-264
TO-264
TO-264
TO-264
Packing Method
TUBE
TUBE
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C
2
www.fairchildsemi.com
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Typical Characteristics
16
I
B
=200mA
14
I
C
[A], COLLECTOR CURRENT
h
FE
, DC CURRENT GAIN
12
10
8
I
B
= 180mA
I
B
= 160mA
I
B
= 140mA
I
B
= 120mA
I
B
= 100mA
I
B
= 80mA
I
B
= 60mA
Vce=5V
Tj=125 C
100
o
Tj=25 C
o
Tj=-25 C
o
6
I
B
= 40mA
4
2
10
I
B
= 0
0
0
2
4
6
8
10
12
14
16
18
20
1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R grade )
10000
Vce(sat)[mV], SATURATION VOLTAGE
Tj=125 C
o
Tj=25 C
o
Ic=10Ib
Vce=5V
h
FE
, DC CURRENT GAIN
100
Tj=-25 C
o
1000
100
Tj=125 C
o
Tj=25 C
o
10
Tj=-25 C
10
o
1
1
10
1
0.1
1
10
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain ( O grade )
Figure 4. Collector-Emitter Saturation Voltage
12
10000
V
CE
= 5V
10
Vbe(sat)[mV], SATURATION VOLTAGE
Ic=10Ib
I
C
[A], COLLECTOR CURRENT
8
Tj=-25 C
1000
o
Tj=25 C
o
6
4
Tj=125 C
o
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
0.1
1
10
V
BE
[V], BASE-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C
3
www.fairchildsemi.com
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Typical Characteristics
Transient Thermal Resistance, R
thjc
[ C / W]
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
100
I
C
MAX. (Pulsed*)
o
I
C
[A], COLLECTOR CURRENT
10ms*
10
I
C
MAX. (DC)
100ms*
DC
1
0.1
*SINGLE NONREPETITIVE
PULSE T
C
=25[ C]
0.01
1
10
100
o
Pulse duration [sec]
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Power Derating
Figure 8. Safe Operating Area
160
140
P
C
[W], POWER DISSIPATION
120
100
80
60
40
20
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 9. Power Derating
© 2009 Fairchild Semiconductor Corporation
2SC5200/FJL4315 Rev. C
4
www.fairchildsemi.com
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