FJN3301RTA_NL datasheet, PDF - EEWORLD Datasheet

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FJN3301RTA_NL: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FJN3301RTA_NL Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

FJN3301RTA_NL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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FJN3301R

Switching Application

(Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ)

• Complement to FJN4301R

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

100

300

150

-55 ~ 150

Units

°C

Equivalent Circuit

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

CBO

(sat)

(off)

(on)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Input Off Voltage

Input On Voltage

Input Resistor

Resistor Ratio

Test Condition

=10µA, I

=100µA, I

=40V, I

=5V, I

=10mA

=10mA, I

=0.5mA

=10V, I

=5mA

=10V, I

f=1.0MHz

=5V, I

=100µΑ

=0.3V, I

=20mA

3.2

0.9

4.7

0.5

6.2

1.1

250

3.7

0.3

MHz

KΩ

Min.

0.1

Typ.

Max.

Units

µA

Rev. A, July 2002

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