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FJN3303 High Voltage Fast-Switching NPN Power Transistor
May 2005
FJN3303
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
1
TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
Base Current (Pulse) *
T
C
= 25°C unless otherwise noted
Parameter
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
-65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Collector Power Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
©2005 Fairchild Semiconductor Corporation
1
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FJN3303 Rev. D
FJN3303 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Conditions
I
C
= 500µA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500µA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1.0A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1.0A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1.0A, I
B
= 0.25A
V
CE
= 10V, I
C
= 0.1A
V
CC
= 125V, I
C
= 1A
I
B1
= - I
B2
= -0.2A
R
L
= 125Ω
Min.
700
400
9
Typ.
Max
Units
V
V
V
10
10
14
5
23
0.5
1.0
3.0
1.0
1.2
4
1.1
4.0
0.7
µA
µA
V
V
V
V
V
MHz
µs
µs
µs
V
BE(sat)
f
T
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Thermal Characteristics
Symbol
R
θJC
R
θJA
T
C
= 25°C unless otherwise noted
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Rating
48
125
Units
°C/W
°C/W
FJN3303 Rev. D
2
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FJN3303 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
1.6
1.4
100
Figure 2. DC Current Gain
V
CE
= 2V
Ta = 125 C
o
I
C
[A], COLLECTOR CURRENT
Ta = 75 C
o
1.0
0.8
h
FE
, DC CURRENT GAIN
1.2
I
B
= 120 mA
Ta = - 25 C
10
o
Ta = 25 C
o
I
B
= 40 mA
0.6
0.4
0.2
0.0
I
B
= 20 mA
0
1
2
3
4
5
6
7
8
9
10
1
1E-3
0.01
0.1
1
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter Saturation Voltage
10
V
CE
(sat) [V], SATURATION VOLTAGE
Ta = 25 C
o
1
Ta = - 25 C
o
V
BE
(sat) [V], SATURATION VOLTAGE
I
C
= 4 I
B
Ta = 125 C
o
Ta = 75 C
o
I
C
= 4 I
B
1
Ta = - 25 C
o
Ta = 25 C
o
0.1
Ta = 125 C
o
Ta = 75 C
o
0.01
0.01
0.1
1
10
0.1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
10
Figure 6. Resistive Load Switching Time
10
t
STG
& t
F
[
µ
s], SWITCHING TIME
t
STG
1
t
STG
& t
F
[
µ
s], SWITCHING TIME
t
STG
1
t
F
0.1
t
F
0.1
I
B1
= - I
B2
= 0.2A
V
CC
= 125V
0.01
0.1
1
I
B1
= 120mA, I
B2
= - 40mA
V
CC
= 310V
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
FJN3303 Rev. D
3
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FJN3303 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Forward Biased Safe Operating Area
10
Figure 8. Reverse Biased Safe Operating Area
10
I
C
(DC)
I
C
[A], COLLECTOR CURRENT
1
0.1
I
C
[A], COLLECTOR CURRENT
1
0.01
T
C
= 25 C
Single Pulse
1E-3
0.1
1
10
100
1000
o
I
B1
= 1A, R
B2
= 0
V
CC
= 50V, L =1 mH
0.1
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
1.4
P
C
[W], COLLECTOR POWER DISSIPATION
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
o
75
100
125
150
175
T
a
[ C], AMBIENT TEMPERATURE
FJN3303 Rev. D
4
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