VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).
PRODUCT SUMMARY
I
F(AV)
Type
250 A to 320 A
Modules - Diode, High Voltage
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VSK.250..
250
T
C
100
393
7015
7345
246
225
2460
VSK.270..
270
100
424
8920
9430
398
363
3980
400 to 3000
- 40 to 150
VSK.320..
320
100
502
10 110
10 580
511
466
5110
kA
2
s
kA
2
s
V
°C
A
UNITS
A
°C
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VSK.250
VSK.270
VSK.320
08
12
16
20
VSK.270
30
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
3000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
3100
50
I
RRM
MAXIMUM
AT 150 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average forward
current at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level forward
slope resistance
High level forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VSK.250 VSK.270 VSK.320 UNITS
250
100
393
7015
7345
5900
Sinusoidal half wave,
initial T
J
= T
J m
aximum
6180
246
225
174
159
2460
0.79
0.92
0.63
0.49
1.29
270
100
424
8920
9340
7500
7850
398
363
281
257
3980
0.74
0.87
0.94
0.81
1.48
320
100
502
10 110
10 580
8500
8900
511
466
361
330
5110
0.69
V
0.86
0.59
m
0.44
1.28
V
kA
2
s
kA
2
s
A
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= T
J
maximum, 180° conduction
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted, t = 1 s
TEST CONDITIONS
VALUES
50
3000
UNITS
mA
V
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum resistance, case to heatsink
per module
Mounting torque
± 10 %
MAP to heatsink
busbar to MAP
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and
greased
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
0.16
TEST CONDITIONS
VALUES
VSK.250 VSK.270 VSK.320
- 40 to 150
0.125
K/W
0.035
4 to 6
Nm
8 to 10
800
30
MAGN-A-PAK
g
oz.
UNITS
°C
Approximate weight
Case style
R
CONDUCTION PER JUNCTION
DEVICE
180°
VSK.250
VSK.270
VSK.320
0.009
0.008
0.008
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.010
0.012
0.010
90°
0.014
0.014
0.013
60°
0.020
0.020
0.020
30°
0.032
0.032
0.032
180°
0.007
0.007
0.007
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.011
0.011
0.011
90°
0.015
0.015
0.015
60°
0.021
0.020
0.020
30°
0.033
0.033
0.033
K/W
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
Maximum Allowable Case T
emperature (°C)
Maximum Average Forward Power Loss (W)
150
140
130
120
110
100
90
80
0
50
100
150
200
250
300
Average F
orward Current (A)
30°
Conduction Angle
300
250
200
150
100
50
0
0
50
VSK.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
180°
120°
90°
60°
30°
RMSLimit
Conduc tion Angle
60°
90°
120°
180°
VSK.250.. S
eries
T
J
= 150°C
100
150
200
250
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Maximum Allowable Cas T
e emperature (°C)
140
130
120
110
30°
100
90
80
0
50
VSK.250.. S
eries
R
thJC
(DC) = 0.16 K/ W
Maximum Average F
orward Power Los (W)
s
150
450
400
350
300
250
200 R
MSLimit
150
100
50
0
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
VSK.250.. S
eries
T
J
= 150°C
Conduction Period
Conduction Period
DC
180°
120°
90°
60°
30°
60°
90°
120°
180°
DC
100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum T
ota l Forward Power Loss (W)
600
R
th
A
S
500
400
300
200
100
0
0
50
VSK.250.. S
eries
Per Junc tion
T
J
= 150°C
180°
(S
ine)
DC
0.
08
K/
0.
W
12
K/
W
=
02
0.
W
K/
ta
el
-D
0.2
K/
W
R
0.2
5
K/ W
0. 4
K/ W
0. 6 K
/
W
100 150 200 250 300 350 400
0
T
otal R
MSOutput Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93581
Revision: 02-Jul-10
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A
Vishay Semiconductors
(MAGN-A-PAK Power Modules)
1200
Ma ximum T
otal Power Lo s (W)
s
1000
800
180°
(S
ine)
180°
(R t)
ec
0.
1
0.
08
05
0.
W
K/
R
t hS
/W
3K
0.0
K/
W
K/
W
A
K/ W
.01
=0
600
400
200
0.1
6K
/W
e lt
-D
0.2
5K
/W
aR
2 x VSK.250.. S
eries
S
ingle Phase B ge
rid
Connec ted
T
J
= 150°C
0
100
200
300
400
0.35
K/ W
0
0
500
25
50
75
100
125
150
T
otal Output Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
1800
Maximum T
otal Power Loss (W)
04
0.
2
0.0
R
th
1600
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800
0
0.
06
0.
08
W
K/
A
S
W
K/
K/
W
/W
5K
.00
=0
120°
(Rec t)
K/
W
K/
W
0.1
6K
/W
0.25
K/ W
0.35 K
/W
0.1
2
e lt
-D
aR
3 x VSK.250.. S
eries
T
hree Phase Brid ge
Connec ted
T
J
= 150°C
25
50
75
100
125
150
T
otal Outp ut Current (A)
Maximum Allowab le Ambient T
emp era ture (°C)
Fig. 7 - Forward Power Loss Characteristics
Peak Half S Wave Forward Current (A)
ine
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1
At Any Ra ted Loa d Cond ition And With
Rated V
R
RM
Ap p lied Following Surge.
Initia l T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Peak Half S
ine Wave Forward Current (A)
6500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 150°C
No Voltage Reapp lied
R ted V
RRM
Rea pplied
a
VSK.250.. S
eries
Per Junc tion
10
100
VSK.250.. S
eries
Per Junc tion
0.1
Pulse T
rain Duration (s)
1
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 9 - Maximum Non-Repetitive Surge Current
Document Number: 93581
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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