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IRF3706TRR

Description
Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size348KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF3706TRR Overview

Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

IRF3706TRR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)220 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93936C
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
IRF3706
IRF3706S
IRF3706L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
8.5mΩ
I
D
77A†
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3706
D
2
Pak
IRF3706S
TO-262
IRF3706L
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
20
± 12
77
54
280
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
h
e
P
D
@T
C
= 100°C Maximum Power Dissipation
e
P
D
@T
C
= 25°C
Maximum Power Dissipation
T
J
,T
STG
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
c
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θcs
R
θJA
R
θJA
Junction-to-Case
i
Typ.
Max.
1.7
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
fi
f
–––
0.50
–––
–––
Junction-to-Ambient( PCB mount)
gi
Notes

through
‡
are on page 11
www.irf.com
1
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