TrilithIC™
BTS 775 G
Overview
Features
•
•
•
•
Quad switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Ultra low
R
DS ON
@ 25
°C:
High-side switch: typ.85 mΩ,
P-DSO-28-9
Low-side switch: typ. 45 mΩ
Very high peak current capability
Very low quiescent current
Space- and thermal optimized power P-DSO-Package
Full short-circuit-protection
Operates up to 40 V
Status flag diagnosis
Overtemperature shut down with hysteresis
Short-circuit detection and diagnosis
Open-load detection and diagnosis
C-MOS compatible inputs
Internal clamp diodes
Isolated sources for external current sensing
Over- and under-voltage detection with hysteresis
Ordering Code
Q67007-A9350
Package
P-DSO-28-9
•
•
•
•
•
•
•
•
•
•
•
•
•
Type
BTS 775 G
Description
The
BTS 775 G
is a
TrilithIC
contains one double high-side switch and two low-side
switches in
one P-DSO-28-9
-Package.
“Silicon instead of heatsink”
becomes true
The ultra low
R
DS ON
of this device avoids powerdissipation. It saves costs in mechanical
construction and mounting and increases the efficiency.
The high-side switches are produced in the
SIEMENS SMART SIPMOS
®
technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis. (The
comparable standard high-side product is the
BTS 621L1.)
Semiconductor Group
1
1999-01-07
BTS 775 G
For minimized
R
DS ON
the two low-side switches are N channel vertical power FETs in the
SIEMENS SMART SIPMOS
®
technology. Fully protected by embedded protection
functions. (The comparable standard product is the
BSP 78).
Each drain of these three chips is mounted on separated leadframes (see
P-DSO-28-9
pin configuration). The sources of all four power transistors are connected to separate
pins.
So the
BTS 775 G
can be used in H-Bridge configuration as well as in any other switch
configuration.
Moreover, it is possible to add current sense resistors.
All these features open a broad range of automotive and industrial applications.
Semiconductor Group
2
1999-01-07
BTS 775 G
DL1
GL1
DL1
N.C.
DHVS
GND
GH1
ST
GH2
1
2
3
4
5
6
7
HS-Lead Frame
8
9
LS-Lead Frame 1
28 DL1
27 SL1
26 SL1
25 DL1
24 DHVS
23 SH1
22 SH1
21 SH2
20 SH2
19 DHVS
18 DL2
LS-Lead Frame 2
17
SL2
DHVS 10
N.C.
DL2
GL2
DL2
11
12
13
14
16 SL2
15 DL2
AEP02071
Figure 1
Pin Configuration
(top view)
Semiconductor Group
3
1999-01-07
BTS 775 G
Pin Definitions and Functions
Pin No.
1, 3, 25, 28
2
4
5, 10, 19, 24
6
7
8
9
11
12, 14, 15, 18
13
16, 17
20, 21
22, 23
26, 27
1)
Symbol
DL1
GL1
N.C.
DHVS
GND
GH1
ST
GH2
N.C.
DL2
GL2
SL2
SH2
SH1
SL1
Function
Drain of low-side switch1
Leadframe 1
1)
Gate of low-side switch1
not connected
Drain of high-side switches and power supply voltage
Leadframe 2
1)
Ground
Gate of high-side switch1
Status of high-side switches; open Drain output
Gate of high-side switch2
not connected
Drain of low-side switch2
Leadframe 3
1)
Gate of low-side switch2
Source of low-side switch2
Source of high-side switch2
Source of high-side switch1
Source of low-side switch1
To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.
Bold type: Pin needs power wiring
Semiconductor Group
4
1999-01-07
BTS 775 G
DHVS
5, 10, 19, 24
ST
8
Diagnosis
Biasing and Protection
GH1
7
GH2
9
Driver
IN OUT
0 0 L L
0 1 L H
1 0 H L
1 1 H H
R
O1
R
O2
20, 21
SH2
12, 14, 15, 18
GND
6
Protection
22, 23
1, 3, 25, 28
DL2
SH1
DL1
GL1
2
Gate
Driver
Protection
GL2
13
Gate
Driver
26, 27
SL1
16, 17
SL2
AEB02676
Figure 2
Block Diagram
Semiconductor Group
5
1999-01-07
京公网安备 11010802033920号
EEWORLD
