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BYM99/41133

Description
DIODE 1.8 A, 600 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size172KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYM99/41133 Overview

DIODE 1.8 A, 600 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYM99/41133 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)3.6 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1.8 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.015 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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