Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-126
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 3 A |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 60 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 10 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 45 MHz |
| KSB744 | KSB744A-Y | KSB744A | KSB744A-R | KSB744A-O | KSB744-Y | |
|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-126 | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-126 | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 60 | 160 | 60 | 60 | 100 | 160 |
| JEDEC-95 code | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 45 MHz | 45 MHz | 45 MHz | 45 MHz | 45 MHz | 45 MHz |
| ECCN code | - | EAR99 | - | EAR99 | EAR99 | EAR99 |
| Collector-emitter maximum voltage | - | 60 V | - | 60 V | 60 V | 45 V |
| Maximum power consumption environment | - | 10 W | - | 10 W | 10 W | 10 W |
| VCEsat-Max | - | 2 V | - | 2 V | 2 V | 2 V |
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