4- and 8-Channel EMI Filter Arrays
with ESD Protection
CM1436
Features
•
•
•
•
•
•
•
Four, six and eight channels of EMI filtering with
ESD protection
Greater than 30dB of attenuation from 800MHz to
3GHz
±15kV
ESD protection (IEC 61000-4-2, contact
discharge)
±30kV
ESD protection (HBM)
Fabricated with
Centurion™
advanced low
capacitance zener process technology
Space saving, low-profile 8-, 12- and 16-lead
0.4mm pitch TDFN packages
Lead-free version available
Product Description
The CM1436 is an EMI filter array with ESD
protection, which integrates either four, six or eight pi
filters (C-R-C). Each CM1436 filter has component
values of 15pF-200Ω-15pF. These parts include ESD
protection diodes on every pin, providing a very high
level of protection for sensitive electronic components
that may be subjected to electrostatic discharge
(ESD). The ESD diodes connected to the filter ports
safely dissipate ESD strikes of
±15kV
contact
discharge, twice the specification requirement of the
IEC 61000-4-2, Level 4 international standard. Using
the MIL-STD-883 (Method 3015) specification for
Human Body Model (HBM) ESD, the pins are
protected for contact discharges at greater than
±30kV.
This device is particularly well-suited for portable
electronics (e.g. mobile handsets, PDAs, notebook
computers) because of its small package and easy-
to-use pin assignments. In particular, the CM1436 is
ideal for EMI filtering and protecting data lines from
ESD in wireless handsets.
The CM1436 is available in space-saving, low-profile,
8-lead, 12-lead and 16-lead 0.4mm pitch TDFN
packages. It is fabricated with
Centurion™
process
and available with lead-free finishing.
Applications
•
•
•
I/O port protection for mobile handsets, notebook
computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs
or notebook computers.
EMI filtering for LCD, camera and chip-to-chip
data lines
©2010 SCILLC. All rights reserved.
April 2010 Rev. 2
Publication Order Number:
CM1436/D
CM1436
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
R
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse
bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-
883, Method 3015
b) Contact Discharge per IEC
61000-4-2 Level 4
Cut-off Frequency
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Absolute Attenuation @ 1GHz from
0dB Level
At 2.5V DC, 1MHz, 30mV AC
I
DIODE
= 10µA
V
DIODE
= 3.3V
CONDITIONS
MIN
160
12
TYP
200
15
6.0
0.1
1
MAX
240
18
UNITS
Ω
pF
V
µA
I
LOAD
= 10mA
I
LOAD
= -10mA
Note 2
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
V
ESD
±30
±15
kV
kV
f
C
R = 200Ω, C = 15pF;
100
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1 and 3
35
MHz
dB
A
1GHz
A
800MHz - 6GHz
Absolute Attenuation @ 800MHz to
6GHz from 0dB Level
30
dB
Note 1: T
A
=25
°
unless otherwise specified.
C
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 5 of 16 | www.onsemi.com
Embedded System
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