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FLC253MH-6

Description
C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size223KB,4 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric View All

FLC253MH-6 Overview

C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLC253MH-6 Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyJUNCTION
highest frequency bandC BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsGALLIUM ARSENIDE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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